STW3N170

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-3PF-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

1.7 kV

Id - Continuous Drain Current:

2.6 A

Rds On - Drain-Source Resistance:

13 Ohms

Vgs th - Gate-Source Threshold Voltage:

3 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

44 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

63 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

PowerMESH

Packaging:

Tube

Series:

STW3N170

Transistor Type:

1 N-Channel

Brand:

STMicroelectronics

Fall Time:

53 ns

Product Type:

MOSFET

Rise Time:

9 ns

Factory Pack Quantity:

600

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

51 ns

Typical Turn-On Delay Time:

25 ns

Unit Weight:

0.245577 oz

Tags

STW3N, STW3, STW