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A2G22S190-01SR3

A2G22S190-01SR3
Mfr. #:
A2G22S190-01SR3
Manufacturer:
NXP Semiconductors
Description:
RF MOSFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 36 W Avg., 48 V
Lifecycle:
New from this manufacturer.
Datasheet:
A2G22S190-01SR3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
A2G22S190-01SR3 more Information A2G22S190-01SR3 Product Details
Product Attribute
Attribute Value
Manufacturer:
NXP
Product Category:
RF MOSFET Transistors
RoHS:
Y
Transistor Polarity:
N-Channel
Technology:
GaN Si
Id - Continuous Drain Current:
19 mA
Vds - Drain-Source Breakdown Voltage:
150 V
Gain:
16.5 dB
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Mounting Style:
SMD/SMT
Package / Case:
NI-400S-2
Packaging:
Reel
Operating Frequency:
1800 MHz to 2200 MHz
Series:
A2G22S190
Type:
RF Power MOSFET
Brand:
NXP Semiconductors
Number of Channels:
1 Channel
Product Type:
RF MOSFET Transistors
Factory Pack Quantity:
250
Subcategory:
MOSFETs
Vgs - Gate-Source Voltage:
- 8 V
Vgs th - Gate-Source Threshold Voltage:
- 2.3 V
Part # Aliases:
935372783118
Tags
A2G22S1, A2G22, A2G2, A2G
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
RF Power GaN Portfolio
NXP Semiconductors RF Power Gallium Nitride (GaN) Portfolio provides state of the art linearizability and RF performance that enables 5G deployment. These transistors offer solutions for cellular infrastructure, defense, and industrial markets. The GaN transistors provide wideband performance and high-frequency operation. These transistors feature end-to-end applications, solution support, and high-volume production. The GaN transistors come with advanced GaN on SiC technology that offers high power density. These transistors are designed for cellular base station applications.
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 RF JFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 32 W Avg., 48 V
A2G22S190-01SR3

Mfr.#: A2G22S190-01SR3

OMO.#: OMO-A2G22S190-01SR3

 RF MOSFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 36 W Avg., 48 V
A2G22S160-01SR3

Mfr.#: A2G22S160-01SR3

OMO.#: OMO-A2G22S160-01SR3-NXP-SEMICONDUCTORS

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Mfr.#: A2G22S160

OMO.#: OMO-A2G22S160-1190

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A2G22S160--01SR3

Mfr.#: A2G22S160--01SR3

OMO.#: OMO-A2G22S160--01SR3-1190

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A2G22S160-01S

Mfr.#: A2G22S160-01S

OMO.#: OMO-A2G22S160-01S-1190

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Availability
Stock:
Available
On Order:
2000
Enter Quantity:
Current price of A2G22S190-01SR3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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