NID5003NT4G

Mfr. #:: NID5003NT4G
Manufacturer:: ON Semiconductor
Description:: IGBT Transistors MOSFET 42V 20A N-Channel
Lifecycle:: New from this manufacturer.
Datasheet:: NID5003NT4G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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Product Attribute
Attribute Value

Manufacturer: ON Semiconductor

Product Category: PMIC - Power Distribution Switches, Load Drivers

Series: HDPlus

Packaging: Digi-ReelR

Unit-Weight: 0.139332 oz

Mounting-Style: SMD/SMT

Package-Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Technology: Si

Input-Type: Non-Inverting

Operating-Temperature: -55°C ~ 150°C (TJ)

Output-Type: N-Channel

Features: Auto Restart, Slew Rate Controlled

Number-of-Channels: 1 Channel

Interface: On/Off

Supplier-Device-Package: DPAK-3

Ratio-Input:Output: 1899/12/30 1:01:00

Configuration: Single

Number-of-Outputs: 1

Voltage-Supply-Vcc-Vdd: Not Required

Fault-Protection: Current Limiting (Fixed), Over Temperature, Over Voltage

Output-Configuration: Low Side

Rds-On-Typ: 42 mOhm

Voltage-Load: 42V (Max)

Current-Output-Max: 20A

Switch-Type: General Purpose

Transistor-Type: 1 N-Channel

Pd-Power-Dissipation: 2.3 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Vgs-Gate-Source-Voltage: 14 V

Id-Continuous-Drain-Current: 20 A

Vds-Drain-Source-Breakdown-Voltage: 42 V

Rds-On-Drain-Source-Resistance: 42 mOhms

Transistor-Polarity: N-Channel

Channel-Mode: Enhancement

Tags: NID5003N, NID5003, NID5, NID

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

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Step3:
Packaging Boxes

NID5003NT4G Description

***Semiconductor: Self-Protected FET with Temperature and Current Limit, 42 V Clamp, 20 A, Single N-Channel

***ure Electronics: N-Channel 42 V 42 mOhm 1.3 W Surface Mount Self-Protected FET - TO-252-3

***p One Stop Global: Trans MOSFET N-CH 42V 20A 3-Pin(2+Tab) DPAK T/R

***ical: Self-Protected FET with Temperature and Current Limit

***i-Key: MOSFET PWR HD+ 20A 42V ESD DPAK

***ser: MOSFETs- Protected 42V 20A N-Channel

***ark: SMART MOSFET, N, 42V, 1.3W, D-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:42V; Current, Id Cont:20A; Resistance, Rds On:0.042ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.7V; Case ;RoHS Compliant: Yes

***ment14 APAC: Prices include import duty and tax. SMART MOSFET, N, 42V, 1.3W, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:42V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:2.3W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Avalanche Single Pulse Energy Eas:400mJ; Current Id Max:20A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pin Configuration:1(G),2(D),3(S); Shutdown Temperature:175°C; Termination Type:Surface Mount Device; Voltage Vds Typ:42V; Voltage Vgs Max:14VDC; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.2V; Voltage Vgs th Min:1V

***nell: SMART MOSFET, N, 42V, 1.3W, D-PAK; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:20A; Napięcie drenu / źródła Vds:42V; Rezystancja przewodzenia Rds(on):0.042ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:1.7V; Straty mocy Pd:2.3W; Rodzaj obudowy tranzystora:TO-252; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (15-Jan-2018); Konfiguracja pinów:1(G),2(D),3(S); Lawinowa energia jednego impulsu Eas:400mJ; Maks. prąd Id:20A; Napięcie Vds, typ.:42V; Napięcie Vgs pomiaru Rds on:10V; Napięcie Vgs th, maks.:2.2V; Napięcie Vgs th, min.:1V; Napięcie Vgs, maks.:14VDC; Temperatura robocza, min.:-55°C; Temperatura wyłączania:175°C; Typ zakończenia:Do montażu powierzchniowego; Zakres temperatury roboczej:-55°C do +150°C

Market price

Part #	Mfg.	Description	Stock	Price
NID5003NT4G DISTI # NID5003NT4GOSTR-ND	ON Semiconductor	MOSFET PWR HD+ 20A 42V ESD DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
NID5003NT4G DISTI # NID5003NT4GOSCT-ND	ON Semiconductor	MOSFET PWR HD+ 20A 42V ESD DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
NID5003NT4G DISTI # NID5003NT4GOSDKR-ND	ON Semiconductor	MOSFET PWR HD+ 20A 42V ESD DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
NID5003NT4G DISTI # 863-NID5003NT4G	ON Semiconductor	MOSFET 42V 20A N-Channel RoHS: Compliant	0
NID5003NT4 DISTI # 863-NID5003NT4	ON Semiconductor	MOSFET 42V 20A N-Channel RoHS: Not compliant	0
NID5003NT4G DISTI # 1453665	ON Semiconductor	SMART MOSFET, N, 42V, 1.3W, D-PAK RoHS: Compliant	0	2500:$0.8770 1000:$0.9570 500:$1.3200 100:$1.5000 10:$1.8200 1:$2.1900

Image	Part #	Description
	Mfr.#: NID5004NT4G OMO.#: OMO-NID5004NT4G	Gate Drivers POWER MICROINTEGRAT
	Mfr.#: NID5001NT4G OMO.#: OMO-NID5001NT4G	MOSFET 42V 33A N-Channel
	Mfr.#: NID5003NT4G OMO.#: OMO-NID5003NT4G	MOSFET 42V 20A N-Channel
	Mfr.#: NID5003NT4G OMO.#: OMO-NID5003NT4G-ON-SEMICONDUCTOR	IGBT Transistors MOSFET 42V 20A N-Channel
	Mfr.#: NID5001 OMO.#: OMO-NID5001-1190	New and Original
	Mfr.#: NID5001N OMO.#: OMO-NID5001N-1190	New and Original
	Mfr.#: NID5001NT4 OMO.#: OMO-NID5001NT4-ON-SEMICONDUCTOR	MOSFET N-CH 42V 33A DPAK
	Mfr.#: NID5001NT4G OMO.#: OMO-NID5001NT4G-ON-SEMICONDUCTOR	MOSFET PWR HD+ 33A 42V ESD DPAK
	Mfr.#: NID5003N OMO.#: OMO-NID5003N-1190	New and Original
	Mfr.#: NID5003NT4 OMO.#: OMO-NID5003NT4-ON-SEMICONDUCTOR	MOSFET N-CH 42V 20A DPAK

NID5003NT4G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes