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NTD12N10G

NTD12N10G
Mfr. #:
NTD12N10G
Manufacturer:
ON Semiconductor
Description:
MOSFET 100V 12A N-Channel
Lifecycle:
New from this manufacturer.
Datasheet:
NTD12N10G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NTD12N10G DatasheetNTD12N10G Datasheet (P4-P6)NTD12N10G Datasheet (P7-P8)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
12 A
Rds On - Drain-Source Resistance:
165 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
1.76 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
2.38 mm
Length:
6.73 mm
Transistor Type:
1 N-Channel
Type:
MOSFET
Width:
6.22 mm
Brand:
ON Semiconductor
Forward Transconductance - Min:
7 S
Fall Time:
32 ns
Product Type:
MOSFET
Rise Time:
30 ns
Factory Pack Quantity:
75
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
22 ns
Typical Turn-On Delay Time:
11 ns
Unit Weight:
0.139332 oz
Tags
NTD12N, NTD12, NTD1, NTD
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Power MOSFET, 12 A, 100 V
***ser
MOSFETs- Power and Small Signal 100V 12A N-Channel
***i-Key
MOSFET N-CH 100V 12A DPAK
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:12A; On Resistance, Rds(on):165mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D-PAK ;RoHS Compliant: Yes
***nell
MOSFET, N, D-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:12A; Resistance, Rds On:0.165ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3.1V; Case Style:DPAK; Termination Type:SMD; Avalanche Single Pulse Energy Eas:75mJ; Current, Idm Pulse:36A; Power, Pd:56.6W; Thermal Resistance, Junction to Case A:2.65°C/W; Voltage, Vds Max:100V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V
Part # Mfg. Description Stock Price
NTD12N10G
DISTI # NTD12N10GOS-ND		ON SemiconductorMOSFET N-CH 100V 12A DPAK
RoHS: Compliant
Min Qty: 600
Container: Tube		Limited Supply - Call
    NTD12N10
    DISTI # 863-NTD12N10    		ON SemiconductorMOSFET 100V 12A N-Channel
    RoHS: Not compliant    		0
      NTD12N10G
      DISTI # 863-NTD12N10G      		ON SemiconductorMOSFET 100V 12A N-Channel
      RoHS: Compliant      		0
        Image Part # Description
        NTD12N10-1G

        Mfr.#: NTD12N10-1G

        OMO.#: OMO-NTD12N10-1G

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        NTD12N10-001

        Mfr.#: NTD12N10-001

        OMO.#: OMO-NTD12N10-001-1190

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        NTD12N10T4

        Mfr.#: NTD12N10T4

        OMO.#: OMO-NTD12N10T4-ON-SEMICONDUCTOR

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        NTD14N03RG

        Mfr.#: NTD14N03RG

        OMO.#: OMO-NTD14N03RG-ON-SEMICONDUCTOR

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        NTD180-18V

        Mfr.#: NTD180-18V

        OMO.#: OMO-NTD180-18V-1190

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        NTD18N06L-001

        Mfr.#: NTD18N06L-001

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        Availability
        Stock:
        Available
        On Order:
        4500
        Enter Quantity:
        Current price of NTD12N10G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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