NTD12

NTD12N10-1G vs NTD12N10G vs NTD12N10T4

 
PartNumberNTD12N10-1GNTD12N10GNTD12N10T4
DescriptionMOSFET 100V 12A N-ChannelMOSFET 100V 12A N-ChannelMOSFET N-CH 100V 12A DPAK
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current12 A12 A-
Rds On Drain Source Resistance165 mOhms165 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation56.6 W1.76 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Height6.35 mm2.38 mm-
Length6.73 mm6.73 mm-
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFETMOSFET-
Width2.38 mm6.22 mm-
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min7 S7 S-
Fall Time32 ns32 ns-
Product TypeMOSFETMOSFET-
Rise Time30 ns30 ns-
Factory Pack Quantity7575-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time22 ns22 ns-
Typical Turn On Delay Time11 ns11 ns-
Unit Weight0.139332 oz0.139332 oz-
Manufacturer Part # Description RFQ
ON Semiconductor
ON Semiconductor
NTD12N10-1G MOSFET 100V 12A N-Channel
NTD12N10G MOSFET 100V 12A N-Channel
NTD12N10-1G MOSFET N-CH 100V 12A IPAK
NTD12N10G MOSFET N-CH 100V 12A DPAK
NTD12N10T4 MOSFET N-CH 100V 12A DPAK
NTD12N10T4G MOSFET N-CH 100V 12A DPAK
NTD12 New and Original
NTD12N10 MOSFET 100V 12A N-Channel
NTD12N10 T12N10 New and Original
NTD12N10-001 New and Original
NTD12N10-1 New and Original
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