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IRFHM792TR2PBF

IRFHM792TR2PBF
Mfr. #:
IRFHM792TR2PBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 100V dual 2.9A 195mOhm
Lifecycle:
New from this manufacturer.
Datasheet:
IRFHM792TR2PBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PQFN-8
Number of Channels:
2 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
2.3 A
Rds On - Drain-Source Resistance:
195 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
4.2 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2.3 W
Configuration:
Dual
Channel Mode:
Enhancement
Packaging:
Reel
Height:
0.9 mm
Length:
3.3 mm
Transistor Type:
2 N-Channel
Width:
3.3 mm
Brand:
Infineon / IR
Forward Transconductance - Min:
3.5 S
Fall Time:
2.6 ns
Product Type:
MOSFET
Rise Time:
4.7 ns
Factory Pack Quantity:
400
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
5.2 ns
Typical Turn-On Delay Time:
3.4 ns
Part # Aliases:
SP001575860
Unit Weight:
0.001164 oz
Tags
IRFHM79, IRFHM7, IRFHM, IRFH, IRF
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
100V Dual N-Channel HEXFET Power MOSFET in a PQFN 3.3mm x3.3mm Lead Free package
***ical
Trans MOSFET N-CH 100V 2.3A 8-Pin PQFN EP T/R
***nell
MOSFET, DUAL, N-CH, 100V, 2.9A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.164ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:10.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Part # Mfg. Description Stock Price
IRFHM792TR2PBF
DISTI # IRFHM792TR2PBFCT-ND		Infineon Technologies AGMOSFET 2N-CH 100V 2.3A 8PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    IRFHM792TR2PBF
    DISTI # IRFHM792TR2PBFDKR-ND    		Infineon Technologies AGMOSFET 2N-CH 100V 2.3A 8PQFN
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      IRFHM792TR2PBF
      DISTI # 942-IRFHM792TR2PBF      		Infineon Technologies AGMOSFET MOSFT 100V dual 2.9A 195mOhm
      RoHS: Compliant      		0
        IRFHM792TR2PBFInternational Rectifier 
        RoHS: Compliant        		Europe - 550
          Image Part # Description
          IRFHM792TRPBF

          Mfr.#: IRFHM792TRPBF

          OMO.#: OMO-IRFHM792TRPBF

          		 MOSFET 100V DUAL N-CH HEXFET
          IRFHM792TR2PBF

          Mfr.#: IRFHM792TR2PBF

          OMO.#: OMO-IRFHM792TR2PBF

          		 MOSFET MOSFT 100V dual 2.9A 195mOhm
          IRFHM792TRPBFINFINEON-CS

          Mfr.#: IRFHM792TRPBFINFINEON-CS

          OMO.#: OMO-IRFHM792TRPBFINFINEON-CS-1190

          		 New and Original
          IRFHM792TR2PBF

          Mfr.#: IRFHM792TR2PBF

          OMO.#: OMO-IRFHM792TR2PBF-INFINEON-TECHNOLOGIES

          		 IGBT Transistors MOSFET MOSFT 100V dual 2.9A 195mOhm
          IRFHM792TRPBF

          Mfr.#: IRFHM792TRPBF

          OMO.#: OMO-IRFHM792TRPBF-INFINEON-TECHNOLOGIES

          		 RF Bipolar Transistors MOSFET 100V DUAL N-CH HEXFET
          Availability
          Stock:
          Available
          On Order:
          5000
          Enter Quantity:
          Current price of IRFHM792TR2PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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