DMN90H8D5HCTI

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

ITO-220AB-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

900 V

Id - Continuous Drain Current:

2.5 A

Rds On - Drain-Source Resistance:

5.5 Ohms

Vgs th - Gate-Source Threshold Voltage:

3 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

7.9 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

30 W

Configuration:

Single

Channel Mode:

Enhancement

Transistor Type:

1 N-Channel

Brand:

Diodes Incorporated

Fall Time:

17 ns

Product Type:

MOSFET

Rise Time:

21 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

17.6 ns

Typical Turn-On Delay Time:

16 ns

Unit Weight:

0.065257 oz

Tags

DMN90, DMN9, DMN