IRLHM620TR2PBF

Mfr. #:: IRLHM620TR2PBF
Manufacturer:: Infineon / IR
Description:: MOSFET MOSFT 20V 40A 2.5V 2.5mOhm Drv cpbl
Lifecycle:: New from this manufacturer.
Datasheet:: IRLHM620TR2PBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PQFN-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 20 V

Id - Continuous Drain Current:: 40 A

Rds On - Drain-Source Resistance:: 2.5 mOhms

Vgs - Gate-Source Voltage:: 12 V

Qg - Gate Charge:: 52 nC

Pd - Power Dissipation:: 37 W

Configuration:: Single

Packaging:: Reel

Height:: 0.9 mm

Length:: 3.3 mm

Transistor Type:: 1 N-Channel

Width:: 3.3 mm

Brand:: Infineon / IR

Product Type:: MOSFET

Factory Pack Quantity:: 400

Subcategory:: MOSFETs

Part # Aliases:: SP001558170

Tags: IRLHM620T, IRLHM62, IRLHM, IRLH, IRL

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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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Vacuum Packaging with PL

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IRLHM620TR2PBF Description

***ernational Rectifier: 20V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package

***(Formerly Allied Electronics): MOSFET, 20V, 40A, 2.5 MOHM, 2.5V DRIVE CAPABLE, PQFN3.3X3.3

***et: Trans MOSFET N-CH 20V 26A 8-Pin PQFN EP T/R

***nell: MOSFET,W DIODE,N CH,20V,26A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Voltage Vgs Max:12V

*** Electronics: INFINEON IRLHM630TRPBF MOSFET Transistor, N Channel, 21 A, 30 V, 2.8 mohm, 4.5 V, 800 mV

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package, PG-TSDSON-8, RoHS

***roFlash: Single N-Channel 20 V 4.5 mOhm 41 nC HEXFET¬Æ Power Mosfet - PQFN 3.3 x 3.3 mm

*** Source Electronics: Battery Operated DC Motor Inverter MOSFET | MOSFET N-CH 30V 21A PQFN

***Yang: Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R - Tape and Reel

***nell: MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2800µohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:12V

***ineon: Benefits: RoHS Compliant; Low RDS(on); Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Operated Drive; Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 40 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 4.5 / Gate-Source Voltage V = 12 / Fall Time ns = 43 / Rise Time ns = 32 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 9.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 37

***ernational Rectifier: 30V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package

***et Europe: Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R

***ment14 APAC: MOSFET,W DIODE,N CH,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0028ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Voltage Vgs Max:12V

***ernational Rectifier: 20V Dual N-Channel Logic Level HEXFET Power MOSFET in a PQFN 2mm x 2mm Lead Free package

***Yang: Transistor MOSFET Array Dual N-CH 20V 3.4A 6-Pin PQFN T/R - Tape and Reel

***ure Electronics: Dual N-Channel 20 V 45 mOhm 3.1 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm

***ical: Trans MOSFET N-CH 20V 4.5A 6-Pin PQFN EP T/R

***nell: MOSFET, DUAL N CH, 20V, 3.4A, PQFN-6; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3.4A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.033ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 800mV; Power Dissipation Pd: 6.6W; Transistor Case Style: PQFN; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; Dual N-Channel MOSFET | Target Applications: DC Switches; Load Switch

***ernational Rectifier: 150V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package

***(Formerly Allied Electronics): MOSFET, N-Channel, 150V, 56A, 31 mOhm, 33 nC Qg, PQFN

***ment14 APAC: MOSFET, N CH, 150V, 56A, PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:150V; On Resistance Rds(on):25.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:56A; Power Dissipation Pd:250W; Voltage Vgs Max:20V

Market price

Part #	Mfg.	Description	Stock	Price
IRLHM620TR2PBF DISTI # IRLHM620TR2PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 20V 26A PQFN RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRLHM620TR2PBF DISTI # IRLHM620TR2PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 20V 26A PQFN RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IRLHM620TR2PBF DISTI # 70019943	Infineon Technologies AG	MOSFET,20V,40A,2.5 MOHM,2.5V DRIVE CAPABLE,PQFN3.3X3.3 RoHS: Compliant	0	800:$1.2700 1600:$1.2450 4000:$1.2070 8000:$1.1560 20000:$1.0800
IRLHM620TR2PBF DISTI # 942-IRLHM620TR2PBF	Infineon Technologies AG	MOSFET MOSFT 20V 40A 2.5V 2.5mOhm Drv cpbl RoHS: Compliant	0
IRLHM620TR2PBF DISTI # 1865592RL	Infineon Technologies AG	MOSFET,W DIODE,N CH,20V,26A,PQFN33 RoHS: Compliant	0	1:$1.9600 10:$1.6200 100:$1.3100 400:$1.1700 800:$1.0400 2400:$0.9640 10000:$0.9310
IRLHM620TR2PBF DISTI # 1865592	Infineon Technologies AG	MOSFET,W DIODE,N CH,20V,26A,PQFN33 RoHS: Compliant	0	1:$1.9600 10:$1.6200 100:$1.3100 400:$1.1700 800:$1.0400 2400:$0.9640 10000:$0.9310

Related products

Image	Part #	Description
	Mfr.#: IRLHM620TRPBF OMO.#: OMO-IRLHM620TRPBF	MOSFET 20V 1 N-CH HEXFET 2.5mOhms 52nC
	Mfr.#: IRLHM620TR2PBF OMO.#: OMO-IRLHM620TR2PBF	MOSFET MOSFT 20V 40A 2.5V 2.5mOhm Drv cpbl
	Mfr.#: IRLHM620PBF OMO.#: OMO-IRLHM620PBF-1190	New and Original
	Mfr.#: IRLHM620TRPBF OMO.#: OMO-IRLHM620TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 20V 26A PQFN
	Mfr.#: IRLHM620TRPBF_PSI , 2SK1 OMO.#: OMO-IRLHM620TRPBF-PSI-2SK1-1190	New and Original
	Mfr.#: IRLHM620TRPBF-CUT TAPE OMO.#: OMO-IRLHM620TRPBF-CUT-TAPE-1190	New and Original
	Mfr.#: IRLHM620TR2PBF OMO.#: OMO-IRLHM620TR2PBF-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET MOSFT 20V 40A 2.5V 2.5mOhm Drv cpbl

Availability

Stock:: Available
On Order:: 4500
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Current price of IRLHM620TR2PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

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IRLHM620TR2PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes