SSM3K357R,LF

SSM3K357R,LF
Mfr. #:
SSM3K357R,LF
Manufacturer:
Toshiba
Description:
MOSFET LowON Res MOSFET ID=.65A VDSS=60V
Lifecycle:
New from this manufacturer.
Datasheet:
SSM3K357R,LF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SSM3K357R,LF DatasheetSSM3K357R,LF Datasheet (P4-P6)SSM3K357R,LF Datasheet (P7-P9)
ECAD Model:
More Information:
SSM3K357R,LF more Information
Product Attribute
Attribute Value
Manufacturer:
Toshiba
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SOT-23F-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
650 mA
Rds On - Drain-Source Resistance:
1.8 Ohms
Vgs th - Gate-Source Threshold Voltage:
1.3 V
Vgs - Gate-Source Voltage:
12 V
Qg - Gate Charge:
1.5 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
1.5 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Series:
SSM3K357R
Brand:
Toshiba
Forward Transconductance - Min:
500 mS
Product Type:
MOSFET
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
3000 ns
Typical Turn-On Delay Time:
990 ns
Tags
SSM3K35, SSM3K3, SSM3K, SSM3, SSM
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SSM6N357R & SSM3K357R Low ON-Resistance MOSFETs
SSM6N357R & SSM3K357R Low ON-Resistance MOSFETs are silicon N-channel MOSFETs designed for relay driver applications. The SSM6N357R,LF comes with 2 channels whereas the SSM3K357R,LF comes with a single channel. These MOSFETs feature 3V gate drive voltage, built-in internal zener diodes, resistors, and 2kV class Human Body Model (HBM). The low ON-resistance MOSFETs offer 60V drain-source voltage, ±12V gate-source voltage, 150°C channel temperature, and 12.6mJ single-pulse avalanche energy. 
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Toshiba SSM3 High Current MOSFETs provide a high drain current rating, low capacitance, low on-resistance, and fast switching. Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are semiconductor devices used for switching and amplifying electronic signals in electronic devices. Applications include mobile devices (wearable device, smart phone, tablet PC, etc.), load switches, DC-DC converters, and general purpose switches. 
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INTERFACE TX/RX/TXRX CAN
Availability
Stock:
Available
On Order:
1985
Enter Quantity:
Current price of SSM3K357R,LF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.44
$0.44
10
$0.29
$2.88
100
$0.16
$16.10
1000
$0.12
$117.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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