PartNumber | SSM3K329R,LF | SSM3K318R,LF | SSM3K324R,LF |
Description | MOSFET SM Sig N-CH MOS 30V 3.5A 12V VGSS | MOSFET Small Signal Mosfet | MOSFET N-Ch U-MOSVI FET ID 4A 30VDSS 200pF |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-23F-3 | SOT-23F-3 | SOT-23F-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | 60 V | 30 V |
Id Continuous Drain Current | 3.5 A | 2.5 A | 4 A |
Rds On Drain Source Resistance | 126 mOhms | 107 mOhms | 56 mOhms |
Vgs th Gate Source Threshold Voltage | 400 mV | 2.8 V | 400 mV |
Vgs Gate Source Voltage | 4 V | 10 V | 4.5 V |
Qg Gate Charge | 1.5 nC | 7 nC | 2.2 nC |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 1 W | 2 W | 1 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Height | 0.9 mm | 0.9 mm | 0.9 mm |
Length | 2.9 mm | 2.9 mm | 2.9 mm |
Series | SSM3K329 | SSM3K318 | U-MOSVI |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 1.3 mm | 1.3 mm | 1.3 mm |
Brand | Toshiba | Toshiba | Toshiba |
Forward Transconductance Min | 2.1 S | - | 10.5 S |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 6.4 ns | 9.5 ns | 9.5 ns |
Typical Turn On Delay Time | 9.2 ns | 14 ns | 9 ns |
Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |