BSZ180P03NS3 G

BSZ180P03NS3 G
Mfr. #:
BSZ180P03NS3 G
Manufacturer:
Infineon Technologies
Description:
MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
Lifecycle:
New from this manufacturer.
Datasheet:
BSZ180P03NS3 G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TSDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
39.6 A
Rds On - Drain-Source Resistance:
13.5 mOhms
Vgs th - Gate-Source Threshold Voltage:
3.1 V
Vgs - Gate-Source Voltage:
25 V
Qg - Gate Charge:
30 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
40 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.1 mm
Length:
3.3 mm
Series:
OptiMOS P3
Transistor Type:
1 P-Channel
Width:
3.3 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
18 S
Fall Time:
3 ns
Product Type:
MOSFET
Rise Time:
11 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
20 ns
Typical Turn-On Delay Time:
11 ns
Part # Aliases:
BSZ180P03NS3GATMA1 BSZ18P3NS3GXT SP000709744
Tags
BSZ180P03NS3G, BSZ18, BSZ1, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Part # Mfg. Description Stock Price
BSZ180P03NS3GATMA1
DISTI # BSZ180P03NS3GATMA1TR-ND
Infineon Technologies AGMOSFET P-CH 30V 39.6A TSDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 5000:$0.2562
BSZ180P03NS3 G
DISTI # BSZ180P03NS3 G
Infineon Technologies AGTrans MOSFET P-CH 30V 39.6A 8-Pin TSDSON T/R (Alt: BSZ180P03NS3 G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Asia - 0
    BSZ180P03NS3GATMA1
    DISTI # BSZ180P03NS3GATMA1
    Infineon Technologies AGTrans MOSFET P-CH 30V 39.6A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ180P03NS3GATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel
    Americas - 0
    • 5000:$0.1979
    • 10000:$0.1909
    • 20000:$0.1839
    • 30000:$0.1779
    • 50000:$0.1749
    BSZ180P03NS3GATMA1
    DISTI # SP000709744
    Infineon Technologies AGTrans MOSFET P-CH 30V 39.6A 8-Pin TSDSON EP (Alt: SP000709744)
    RoHS: Compliant
    Min Qty: 5000
    Europe - 0
    • 5000:€0.1999
    • 10000:€0.1999
    • 20000:€0.1989
    • 30000:€0.1989
    • 50000:€0.1979
    BSZ180P03NS3 G
    DISTI # 726-BSZ180P03NS3G
    Infineon Technologies AGMOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
    RoHS: Compliant
    4526
    • 1:$0.6600
    • 10:$0.5500
    • 100:$0.3600
    • 1000:$0.2900
    • 5000:$0.2400
    BSZ180P03NS3GATMA1
    DISTI # 726-BSZ180P03NS3GATM
    Infineon Technologies AGMOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
    RoHS: Compliant
    0
    • 1:$0.6500
    • 10:$0.5350
    • 100:$0.3450
    • 1000:$0.2760
    • 5000:$0.2330
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    Availability
    Stock:
    Available
    On Order:
    1985
    Enter Quantity:
    Current price of BSZ180P03NS3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.64
    $0.64
    10
    $0.53
    $5.35
    100
    $0.34
    $34.50
    1000
    $0.28
    $276.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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