PartNumber | BSZ100N03MS G | BSZ100N03LS G | BSZ100N03LSGATMA1 |
Description | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | MOSFET LV POWER MOS |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TSDSON-8 | TSDSON-8 | TSDSON-8 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
Id Continuous Drain Current | 40 A | 12 A | - |
Rds On Drain Source Resistance | 7.3 mOhms | 10 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1 V | - | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 23 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 30 W | 2.1 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | OptiMOS | OptiMOS | OptiMOS |
Packaging | Reel | Reel | Reel |
Height | 1.1 mm | 1.1 mm | 1.1 mm |
Length | 3.3 mm | 3.3 mm | 3.3 mm |
Series | OptiMOS 3M | OptiMOS 3 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 3.3 mm | 3.3 mm | 3.3 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 26 S | - | - |
Fall Time | 2.4 ns | 2.4 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 2.8 ns | 2.6 ns | - |
Factory Pack Quantity | 5000 | 5000 | - |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 16 ns | 13 ns | - |
Typical Turn On Delay Time | 3.8 ns | 2.9 ns | - |
Part # Aliases | BSZ100N03MSGATMA1 BSZ1N3MSGXT SP000311510 | BSZ100N03LSGATMA1 BSZ1N3LSGXT SP000304135 | BSZ100N03LS BSZ1N3LSGXT G SP000304135 |