BSZ1

BSZ100N03MS G vs BSZ100N03LS G vs BSZ100N03LSGATMA1

 
PartNumberBSZ100N03MS GBSZ100N03LS GBSZ100N03LSGATMA1
DescriptionMOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3MMOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3MOSFET LV POWER MOS
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTSDSON-8TSDSON-8TSDSON-8
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current40 A12 A-
Rds On Drain Source Resistance7.3 mOhms10 mOhms-
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge23 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation30 W2.1 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOSOptiMOS
PackagingReelReelReel
Height1.1 mm1.1 mm1.1 mm
Length3.3 mm3.3 mm3.3 mm
SeriesOptiMOS 3MOptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width3.3 mm3.3 mm3.3 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Forward Transconductance Min26 S--
Fall Time2.4 ns2.4 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time2.8 ns2.6 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time16 ns13 ns-
Typical Turn On Delay Time3.8 ns2.9 ns-
Part # AliasesBSZ100N03MSGATMA1 BSZ1N3MSGXT SP000311510BSZ100N03LSGATMA1 BSZ1N3LSGXT SP000304135BSZ100N03LS BSZ1N3LSGXT G SP000304135
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSZ110N06NS3 G MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
BSZ100N06LS3 G MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
BSZ100N03MSGATMA1 MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
BSZ100N03MS G MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
BSZ100N06LS3GATMA1 MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
BSZ100N06NSATMA1 MOSFET MV POWER MOS
BSZ110N08NS5ATMA1 MOSFET N-Ch 80V 40A TSDSON-8
BSZ100N06NS MOSFET DIFFERENTIATED MOSFETS
BSZ100N03LS G MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
BSZ105N04NS G MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3
BSZ100N03LSGATMA1 MOSFET N-CH 30V 40A TSDSON-8
BSZ100N03MSGATMA1 MOSFET N-CH 30V 40A TDSON-8
BSZ100N06NSATMA1 MOSFET N-CH 60V 40A 8TSDSON
BSZ105N04NSGATMA1 MOSFET N-CH 40V 40A TSDSON-8
BSZ100N06LS3GATMA1 MOSFET N-CH 60V 20A TSDSON-8
BSZ110N06NS3GATMA1 MOSFET N-CH 60V 20A TSDSON-8
BSZ110N08NS5ATMA1 RF Bipolar Transistors MOSFET N-Ch 80V 40A TSDSON-8
Infineon Technologies
Infineon Technologies
BSZ110N06NS3GATMA1 MOSFET MV POWER MOS
BSZ105N04NSGATMA1 MOSFET MV POWER MOS
BSZ100N03LSGATMA1 MOSFET LV POWER MOS
BSZ110N06NS3GXT Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R - Tape and Reel (Alt: BSZ110N06NS3GATMA1)
BSZ105N04NSGXT New and Original
BSZ100N03 New and Original
BSZ100N03L New and Original
BSZ100N03LS New and Original
BSZ100N03LS G Trans MOSFET N-CH 30V 12A 8-Pin TSDSON T/R - Bulk (Alt: BSZ100N03LSG)
BSZ100N03LSG Power Field-Effect Transistor, 12A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSZ100N03MS New and Original
BSZ100N03MS G Trans MOSFET N-CH 30V 10A 8-Pin TSDSON T/R (Alt: BSZ100N03MS G)
BSZ100N03MSG Trans MOSFET N-CH 30V 10A 8-Pin TSDSON EP
BSZ100N06L New and Original
BSZ100N06LS3 New and Original
BSZ100N06LS3 G BSZ100N06LS3 G
BSZ100N06LS3G New and Original
BSZ100N06LS3GATMA New and Original
BSZ100N06NS MOSFET DIFFERENTIATED MOSFETS
BSZ105N04NSG Trans MOSFET N-CH 40V 11A 8-Pin TSDSON T/R - Bulk (Alt: BSZ105N04NSG)
BSZ110N06NS3G New and Original
BSZ110N08NS5 N-CH 80V 40A 11mOhm SON-8FL
BSZ115N03CSC New and Original
BSZ115N03M New and Original
BSZ115N03MSC New and Original
BSZ115N03MSC G MOSFET N-KANAL POWER MOS
BSZ120420BE36012321A New and Original
BSZ100N03LSGATMA1-CUT TAPE New and Original
BSZ100N03MSGATMA1-CUT TAPE New and Original
BSZ100N06NSATMA1-CUT TAPE New and Original
BSZ110N06NS3GATMA1-CUT TAPE New and Original
BSZ110N06NS3 G IGBT Transistors MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
BSZ105N04NS G MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3
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