BSZ100N03LSGATMA1

Mfr. #:: BSZ100N03LSGATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET LV POWER MOS
Lifecycle:: New from this manufacturer.
Datasheet:: BSZ100N03LSGATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TSDSON-8

Tradename:: OptiMOS

Packaging:: Reel

Height:: 1.1 mm

Length:: 3.3 mm

Width:: 3.3 mm

Brand:: Infineon Technologies

Product Type:: MOSFET

Subcategory:: MOSFETs

Part # Aliases:: BSZ100N03LS BSZ1N3LSGXT G SP000304135

Tags: BSZ100N03LSG, BSZ100N03LS, BSZ100N03L, BSZ100N03, BSZ100, BSZ10, BSZ1, BSZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSZ100N03LSGATMA1 Description

***ure Electronics: Single N-Channel 30 V 10 mOhm 13 nC OptiMOS Power Mosfet - TSDSON-8

***ment14 APAC: MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:30W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Power Dissipation Pd:30W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TSDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ure Electronics: Single N-Channel 30 V 9 mOhm 14 nC OptiMOS Power Mosfet - TDSON-8

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:48A; On Resistance Rds(On):0.0075Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Product Range:- Rohs Compliant: Yes

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ment14 APAC: MOSFET, N CH, 48A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:32W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:48A; Power Dissipation Pd:32W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***et: Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP

***ark: MOSFET, N CH, 30V, 44A, PG-TSDSON

***ment14 APAC: MOSFET, N CH, 44A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:30W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:44A; Power Dissipation Pd:30W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ure Electronics: Single N-Channel 30 V 9 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS

***p One Stop: Trans MOSFET N-CH 30V 13A 8-Pin PQFN EP T/R

***ment14 APAC: MOSFET, N CHANNEL, 25V, 30A, PQFN-8; TRA; MOSFET, N CHANNEL, 25V, 30A, PQFN-8; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V

***ineon: Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 4.5C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET

***Yang: Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled

***emi: N-Channel PowerTrench® MOSFET, Logic Level, 30V, 12.5A, 9.5mΩ

***ure Electronics: N-Channel 30 V 9.5 mOhm Surface Mount Logic Level PowerTrench Mosfet -SOIC-8

***p One Stop: Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R

***rchild Semiconductor: This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***ment14 APAC: MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12.5A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; SMD Marking:FDS6680A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V

***ure Electronics: N-Channel 30 V 9 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***Yang: Trans MOSFET N-CH 30V 13.5A 8-Pin SOIC N T/R - Tape and Reel

***emi: N-Channel PowerTrench® SyncFET™, 30V, 13.5A, 9.0mΩ

***nell: MOSFET, N-CH, 30V, 13.5A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V;

***rchild Semiconductor: The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6670AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.

***ure Electronics: N-Channel 30 V 8.2 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***emi: N-Channel PowerTrench® MOSFET 30V, 12.5A, 8.5mΩ

***Yang: Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R - Tape and Reel

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

Market price

Part #	Mfg.	Description	Stock	Price
BSZ100N03LSGATMA1 DISTI # V72:2272_06391001	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R RoHS: Compliant	4049	3000:$0.3144 1000:$0.3177 500:$0.4002 250:$0.5434 100:$0.5490 25:$0.7153 10:$0.7225 1:$0.8306
BSZ100N03LSGATMA1 DISTI # V36:1790_06391001	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R RoHS: Compliant	0
BSZ100N03LSGATMA1 DISTI # BSZ100N03LSGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 40A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4340In Stock	1000:$0.3399 500:$0.4249 100:$0.5736 10:$0.7440 1:$0.8500
BSZ100N03LSGATMA1 DISTI # BSZ100N03LSGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 40A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4340In Stock	1000:$0.3399 500:$0.4249 100:$0.5736 10:$0.7440 1:$0.8500
BSZ100N03LSGATMA1 DISTI # BSZ100N03LSGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 40A TSDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Temporarily Out of Stock	25000:$0.2625 10000:$0.2681 5000:$0.2784
BSZ100N03LSGATMA1 DISTI # 32911757	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R RoHS: Compliant	5000	30000:$0.2672 20000:$0.2682 5000:$0.2692
BSZ100N03LSGATMA1 DISTI # 31266643	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R RoHS: Compliant	4049	3000:$0.3144 1000:$0.3177 500:$0.4002 250:$0.5434 100:$0.5490 34:$0.7153
BSZ100N03LSGATMA1 DISTI # BSZ100N03LSGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TSDSON T/R - Bulk (Alt: BSZ100N03LSGATMA1) RoHS: Compliant Min Qty: 1389 Container: Bulk	Americas - 0
BSZ100N03LSGATMA1 DISTI # BSZ100N03LSGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ100N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.2159 10000:$0.2079 20000:$0.1999 30000:$0.1939 50000:$0.1899
BSZ100N03LSGATMA1 DISTI # SP000304135	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TSDSON T/R (Alt: SP000304135) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	5000:€0.2949 10000:€0.2409 20000:€0.2209 30000:€0.2039 50000:€0.1899
BSZ100N03LSGATMA1. DISTI # 31AC8238	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0083ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:-,Power Dissipation Pd:30W,No. of Pins:8Pins RoHS Compliant: Yes	0	20000:$0.2020 30000:$0.2020 50000:$0.2020 10000:$0.2100 1:$0.2190
BSZ100N03LS G DISTI # 726-BSZ100N03LSG	Infineon Technologies AG	MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 RoHS: Compliant	1587	1:$0.7000 10:$0.5820 100:$0.3750 1000:$0.3000 5000:$0.2540 10000:$0.2440 25000:$0.2350
BSZ100N03LSGATMA1 DISTI # 8275142P	Infineon Technologies AG	MOSFET N-CH 12A 30V OPTIMOS3 TSDSON8EP, RL	4150	500:£0.1670

Image	Part #	Description
	Mfr.#: BSZ100N06LS3 G OMO.#: OMO-BSZ100N06LS3-G	MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
	Mfr.#: BSZ100N06LS3GATMA1 OMO.#: OMO-BSZ100N06LS3GATMA1	MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
	Mfr.#: BSZ100N06NSATMA1 OMO.#: OMO-BSZ100N06NSATMA1	MOSFET MV POWER MOS
	Mfr.#: BSZ100N03MS OMO.#: OMO-BSZ100N03MS-1190	New and Original
	Mfr.#: BSZ100N03MSGATMA1 OMO.#: OMO-BSZ100N03MSGATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 40A TDSON-8
	Mfr.#: BSZ100N06LS3 OMO.#: OMO-BSZ100N06LS3-1190	New and Original
	Mfr.#: BSZ100N06LS3 G OMO.#: OMO-BSZ100N06LS3-G-1190	BSZ100N06LS3 G
	Mfr.#: BSZ100N06LS3G OMO.#: OMO-BSZ100N06LS3G-1190	New and Original
	Mfr.#: BSZ100N06NS OMO.#: OMO-BSZ100N06NS-1190	MOSFET DIFFERENTIATED MOSFETS
	Mfr.#: BSZ100N03LSGATMA1-CUT TAPE OMO.#: OMO-BSZ100N03LSGATMA1-CUT-TAPE-1190	New and Original

BSZ100N03LSGATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes