PartNumber | BSZ100N03LS G | BSZ100N03LS | BSZ100N03LSG |
Description | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | Power Field-Effect Transistor, 12A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
Manufacturer | Infineon | Infineon Technologies | - |
Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TSDSON-8 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 12 A | - | - |
Rds On Drain Source Resistance | 10 mOhms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 2.1 W | - | - |
Configuration | Single | Single Quad Drain Triple Source | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | - |
Height | 1.1 mm | - | - |
Length | 3.3 mm | - | - |
Series | OptiMOS 3 | OptiMOS 3 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 3.3 mm | - | - |
Brand | Infineon Technologies | - | - |
Fall Time | 2.4 ns | 2.4 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 2.6 ns | 2.6 ns | - |
Factory Pack Quantity | 5000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 13 ns | 13 ns | - |
Typical Turn On Delay Time | 2.9 ns | 2.9 ns | - |
Part # Aliases | BSZ100N03LSGATMA1 BSZ1N3LSGXT SP000304135 | - | - |
Part Aliases | - | BSZ100N03LSGATMA1 BSZ100N03LSGXT SP000304135 | - |
Package Case | - | TSDSON-8 | - |
Pd Power Dissipation | - | 2.1 W | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 12 A | - |
Vds Drain Source Breakdown Voltage | - | 30 V | - |
Rds On Drain Source Resistance | - | 10 mOhms | - |