BSZ100N03L

BSZ100N03LS G vs BSZ100N03L vs BSZ100N03LS

 
PartNumberBSZ100N03LS GBSZ100N03LBSZ100N03LS
DescriptionMOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTSDSON-8--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current12 A--
Rds On Drain Source Resistance10 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation2.1 W--
ConfigurationSingle-Single Quad Drain Triple Source
Channel ModeEnhancement-Enhancement
TradenameOptiMOS-OptiMOS
PackagingReel-Reel
Height1.1 mm--
Length3.3 mm--
SeriesOptiMOS 3-OptiMOS 3
Transistor Type1 N-Channel-1 N-Channel
Width3.3 mm--
BrandInfineon Technologies--
Fall Time2.4 ns-2.4 ns
Product TypeMOSFET--
Rise Time2.6 ns-2.6 ns
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13 ns-13 ns
Typical Turn On Delay Time2.9 ns-2.9 ns
Part # AliasesBSZ100N03LSGATMA1 BSZ1N3LSGXT SP000304135--
Part Aliases--BSZ100N03LSGATMA1 BSZ100N03LSGXT SP000304135
Package Case--TSDSON-8
Pd Power Dissipation--2.1 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--12 A
Vds Drain Source Breakdown Voltage--30 V
Rds On Drain Source Resistance--10 mOhms
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSZ100N03LS G MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
BSZ100N03LSGATMA1 MOSFET N-CH 30V 40A TSDSON-8
Infineon Technologies
Infineon Technologies
BSZ100N03LSGATMA1 MOSFET LV POWER MOS
BSZ100N03L New and Original
BSZ100N03LS New and Original
BSZ100N03LS G Trans MOSFET N-CH 30V 12A 8-Pin TSDSON T/R - Bulk (Alt: BSZ100N03LSG)
BSZ100N03LSG Power Field-Effect Transistor, 12A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSZ100N03LSGATMA1-CUT TAPE New and Original
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