 | | | |
| PartNumber | BSZ100N03MS G | BSZ100N03LS G | BSZ100N03LSGATMA1 |
| Description | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | MOSFET LV POWER MOS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSDSON-8 | TSDSON-8 | TSDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 40 A | 12 A | - |
| Rds On Drain Source Resistance | 7.3 mOhms | 10 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 23 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 30 W | 2.1 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.1 mm | 1.1 mm | 1.1 mm |
| Length | 3.3 mm | 3.3 mm | 3.3 mm |
| Series | OptiMOS 3M | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 3.3 mm | 3.3 mm | 3.3 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 26 S | - | - |
| Fall Time | 2.4 ns | 2.4 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 2.8 ns | 2.6 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 16 ns | 13 ns | - |
| Typical Turn On Delay Time | 3.8 ns | 2.9 ns | - |
| Part # Aliases | BSZ100N03MSGATMA1 BSZ1N3MSGXT SP000311510 | BSZ100N03LSGATMA1 BSZ1N3LSGXT SP000304135 | BSZ100N03LS BSZ1N3LSGXT G SP000304135 |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ100N06LS3 G | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | |
| BSZ100N03MSGATMA1 | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | ||
| BSZ100N03MS G | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | ||
| BSZ100N06LS3GATMA1 | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | ||
| BSZ100N06NSATMA1 | MOSFET MV POWER MOS | ||
| BSZ100N06NS | MOSFET DIFFERENTIATED MOSFETS | ||
| BSZ100N03LS G | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | ||
| BSZ105N04NS G | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | ||
| BSZ100N03LSGATMA1 | MOSFET N-CH 30V 40A TSDSON-8 | ||
| BSZ100N03MSGATMA1 | MOSFET N-CH 30V 40A TDSON-8 | ||
| BSZ100N06NSATMA1 | MOSFET N-CH 60V 40A 8TSDSON | ||
| BSZ105N04NSGATMA1 | MOSFET N-CH 40V 40A TSDSON-8 | ||
| BSZ100N06LS3GATMA1 | MOSFET N-CH 60V 20A TSDSON-8 | ||
Infineon Technologies |
BSZ105N04NSGATMA1 | MOSFET MV POWER MOS | |
| BSZ100N03LSGATMA1 | MOSFET LV POWER MOS | ||
| BSZ105N04NSGXT | New and Original | ||
| BSZ100N03 | New and Original | ||
| BSZ100N03L | New and Original | ||
| BSZ100N03LS | New and Original | ||
| BSZ100N03LS G | Trans MOSFET N-CH 30V 12A 8-Pin TSDSON T/R - Bulk (Alt: BSZ100N03LSG) | ||
| BSZ100N03LSG | Power Field-Effect Transistor, 12A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSZ100N03MS | New and Original | ||
| BSZ100N03MS G | Trans MOSFET N-CH 30V 10A 8-Pin TSDSON T/R (Alt: BSZ100N03MS G) | ||
| BSZ100N03MSG | Trans MOSFET N-CH 30V 10A 8-Pin TSDSON EP | ||
| BSZ100N06L | New and Original | ||
| BSZ100N06LS3 | New and Original | ||
| BSZ100N06LS3 G | BSZ100N06LS3 G | ||
| BSZ100N06LS3G | New and Original | ||
| BSZ100N06LS3GATMA | New and Original | ||
| BSZ100N06NS | MOSFET DIFFERENTIATED MOSFETS | ||
| BSZ105N04NSG | Trans MOSFET N-CH 40V 11A 8-Pin TSDSON T/R - Bulk (Alt: BSZ105N04NSG) | ||
| BSZ100N03LSGATMA1-CUT TAPE | New and Original | ||
| BSZ100N03MSGATMA1-CUT TAPE | New and Original | ||
| BSZ100N06NSATMA1-CUT TAPE | New and Original | ||
| BSZ105N04NS G | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 |