BSZ100N03MSGATMA1

Mfr. #:: BSZ100N03MSGATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
Lifecycle:: New from this manufacturer.
Datasheet:: BSZ100N03MSGATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TSDSON-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 40 A

Rds On - Drain-Source Resistance:: 7.3 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 23 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 30 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 1.1 mm

Length:: 3.3 mm

Series:: OptiMOS 3M

Transistor Type:: 1 N-Channel

Width:: 3.3 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 26 S

Fall Time:: 2.4 ns

Product Type:: MOSFET

Rise Time:: 2.8 ns

Factory Pack Quantity:: 5000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 16 ns

Typical Turn-On Delay Time:: 3.8 ns

Part # Aliases:: BSZ100N03MS BSZ1N3MSGXT G SP000311510

Unit Weight:: 0.001270 oz

Tags: BSZ100N03MSG, BSZ100N03M, BSZ100N03, BSZ100, BSZ10, BSZ1, BSZ

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

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BSZ100N03MSGATMA1 Description

***ure Electronics: Single N-Channel 30 V 9.1 mOhm 17 nC OptiMOS Power Mosfet - TSDSON-8

***ment14 APAC: MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:30W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Power Dissipation Pd:30W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TSDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 3mm X 3mm PQFN package, PQFN 3X3 8L, RoHS

***(Formerly Allied Electronics): MOSFET, 30V, 16A, 7.1 MOHM, 9.6 NC QG, PQFN33

***Yang: Trans MOSFET N-CH 30V 16A 8-Pin QFN T/R - Tape and Reel

***ark: Transistor; Continuous Drain Current, Id:16A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Low RDS(on); 100% Rg tested; Compatible with Existing Surface Mount Techniques; Very Low Gate Charge; Low Junction to PCB Thermal Resistance; Fully Characterized Avalanche Voltage and Current; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET

***et Japan: Transistor MOSFET Array Dual N-CH 30V 60A/145A 8-Pin Power 56 T/R

***emi: Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V

***ure Electronics: Dual N-Channel 30 V 8 /1.8 mO 21 / 62 nC PowerTrench Asymmetric Mosfet - Power56

*** Stop Electro: Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.

***nell: MOSFET, DUAL N CH, 30V, 60A, POWER 56-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)

***emi: Power MOSFET 25V 72A 8 mOhm Single N-Channel DPAK

***Yang: Trans MOSFET N-CH 25V 32A 3-Pin(2+Tab) DPAK T/R - Tape and Reel

***r Electronics: Power Field-Effect Transistor, 32A I(D), 25V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ser: MOSFETs- Power and Small Signal 25V 75A N-Channel

***ment14 APAC: N CHANNEL MOSFET, 25V, 75A, D-PAK

***ure Electronics: Single N-Channel 30 V 8.7 mOhm 12 nC HEXFET® Power Mosfet - PQFN-5 x 6 mm

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS

***(Formerly Allied Electronics): MOSFET, 30V, 14A, 8.7 MOHM, 8.1 NC QG, PQFN56

***ment14 APAC: MOSFET, N CH, 30V, 14A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:15A; Package / Case:PQFN; Power Dissipation Pd:3.1W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***ineon: Benefits: RoHS Compliant; Industry-leading quality; 100% Rg tested; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Fully Characterized Avalanche Voltage and Current | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET

***ure Electronics: Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS

***et: Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R

***nell: MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:20V

***ineon: Benefits: RoHS Compliant; Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET

***emi: PowerTrench® MOSFET, N-Channel, 25V, 35A, 8.5mΩ

***ure Electronics: N-Channel 25 V 35 A 8.5 mOhm PowerTrench® MOSFET- TO-252AA

*** Stop Electro: Power Field-Effect Transistor, 35A I(D), 25V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***el Electronic: Rectangular Connectors - Headers, Receptacles, Female Sockets 2 Socket Solder Beryllium Copper Through Hole Bulk Gold Polycyclohexylenedimethylene Terephthalate (PCT), Polyester, Glass Filled 10 CONN SOCKET 10POS 0.1 GOLD PCB

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.

***nell: MOSFET, N CH, 25V, 35A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 50W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

Market price

Part #	Mfg.	Description	Stock	Price
BSZ100N03MSGATMA1 DISTI # V72:2272_06391002	Infineon Technologies AG	Trans MOSFET N-CH 30V 10A 8-Pin TSDSON EP T/R RoHS: Compliant	13892	6000:$0.2354 3000:$0.2493 1000:$0.2562 500:$0.2928 250:$0.3045 100:$0.3111 25:$0.4256 10:$0.4506 1:$0.5167
BSZ100N03MSGATMA1 DISTI # BSZ100N03MSGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 40A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	5000In Stock	5000:$0.2784
BSZ100N03MSGATMA1 DISTI # BSZ100N03MSGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 40A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5000In Stock	1000:$0.3399 500:$0.4249 100:$0.5736 10:$0.7440 1:$0.8500
BSZ100N03MSGATMA1 DISTI # BSZ100N03MSGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 40A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5000In Stock	1000:$0.3399 500:$0.4249 100:$0.5736 10:$0.7440 1:$0.8500
BSZ100N03MSGATMA1 DISTI # 26195701	Infineon Technologies AG	Trans MOSFET N-CH 30V 10A 8-Pin TSDSON EP T/R RoHS: Compliant	13892	6000:$0.2350 3000:$0.2489 1000:$0.2558 500:$0.2923 250:$0.3039 100:$0.3106 31:$0.4245
BSZ100N03MSGATMA1 DISTI # 31291407	Infineon Technologies AG	Trans MOSFET N-CH 30V 10A 8-Pin TSDSON EP T/R RoHS: Compliant	10000	5000:$0.1968
BSZ100N03MSGATMA1 DISTI # BSZ100N03MSGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 10A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ100N03MSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.2159 10000:$0.2079 20000:$0.1999 30000:$0.1939 50000:$0.1899
BSZ100N03MSGATMA1 DISTI # SP000311510	Infineon Technologies AG	Trans MOSFET N-CH 30V 10A 8-Pin TSDSON T/R (Alt: SP000311510) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	5000:€0.2949 10000:€0.2409 20000:€0.2209 30000:€0.2039 50000:€0.1899
BSZ100N03MSGATMA1 DISTI # 97Y1269	Infineon Technologies AG	MOSFET, N-CH, 30V, 40A, PG-TSDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0091ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes	0	1:$0.7000 10:$0.5820 25:$0.5130 50:$0.4440 100:$0.3750 250:$0.3500 500:$0.3250 1000:$0.3000
BSZ100N03MSGATMA1 DISTI # 726-BSZ100N03MSGATMA	Infineon Technologies AG	MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M RoHS: Compliant	8354	1:$0.7000 10:$0.5820 100:$0.3750 1000:$0.3000 5000:$0.2540
BSZ100N03MS G DISTI # 726-BSZ100N03MSG	Infineon Technologies AG	MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M RoHS: Compliant	3964	1:$0.7200 10:$0.6000 100:$0.3900 1000:$0.3100 5000:$0.2600
BSZ100N03MSGATMA1 DISTI # 1336711	Infineon Technologies AG	MOSFET OPTIMOS3 30V 40A 11.4MOHM TSDSON8, RL	9980	5000:£0.1930 15000:£0.1850
BSZ100N03MSGATMA1 DISTI # 2617466	Infineon Technologies AG	MOSFET, N-CH, 30V, 40A, PG-TSDSON-8 RoHS: Compliant	2484	5:£0.4430 25:£0.3650 100:£0.2870 250:£0.2670 500:£0.2480
BSZ100N03MSGATMA1 DISTI # C1S322000523616	Infineon Technologies AG	MOSFETs RoHS: Compliant	13892	250:$0.3039 100:$0.3106 25:$0.4245 10:$0.4495
BSZ100N03MSGATMA1 DISTI # C1S322000306189	Infineon Technologies AG	Trans MOSFET N-CH 30V 10A 8-Pin TSDSON EP T/R RoHS: Compliant	10000	5000:$0.2640
BSZ100N03MSGATMA1 DISTI # 2617466	Infineon Technologies AG	MOSFET, N-CH, 30V, 40A, PG-TSDSON-8 RoHS: Compliant	2479	1:$1.3600 10:$1.1900 100:$0.9150 500:$0.6780 1000:$0.5420

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BSZ100N03MSGATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes