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SQUN702E-T1_GE3

SQUN702E-T1_GE3
Mfr. #:
SQUN702E-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET Automotive 40 V N- and P-Channel Common Drain MOSFET Pair and 200 V N-Channel MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
SQUN702E-T1_GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SQUN702E-T1_GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Mounting Style:
SMD/SMT
Package / Case:
Die
Number of Channels:
3 Channel
Transistor Polarity:
N-Channel, P-Channel
Vds - Drain-Source Breakdown Voltage:
40 V, 200 V
Id - Continuous Drain Current:
20 A, 30 A
Rds On - Drain-Source Resistance:
9.2 mOhms, 30 mOhms, 60 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.5 V, 2.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
14 nC, 23 nC, 30.2 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
48 W, 60 W
Configuration:
Triple
Channel Mode:
Enhancement
Tradename:
TrenchFET
Packaging:
Reel
Transistor Type:
2 N-Channel, 1 P-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
16 S, 19 S, 65 S
Fall Time:
2 ns, 10 ns, 19 ns
Product Type:
MOSFET
Rise Time:
3 ns, 9 ns, 12 ns
Factory Pack Quantity:
2000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
15 ns, 22 ns, 43 ns
Typical Turn-On Delay Time:
7 ns, 8 ns, 10 ns
Tags
SQU
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Integrated MOSFETs with Common Drain
Vishay Integrated MOSFETs with Common Drain are 1, 2 and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
N & P Channel Pair Thermally Enhanced MOSFETs
Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design. 
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Availability
Stock:
Available
On Order:
1985
Enter Quantity:
Current price of SQUN702E-T1_GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$3.02
$3.02
10
$2.50
$25.00
100
$2.06
$206.00
250
$1.99
$497.50
500
$1.79
$895.00
1000
$1.51
$1 510.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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