FQP7N80C

Mfr. #:: FQP7N80C
Manufacturer:: ON Semiconductor
Description:: Darlington Transistors MOSFET 800V N-Ch Q-FET advance C-Series
Lifecycle:: New from this manufacturer.
Datasheet:: FQP7N80C Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer: FAIRCHILD

Product Category: FETs - Single

Packaging: Tube

Part-Aliases: FQP7N80C_NL

Unit-Weight: 0.063493 oz

Mounting-Style: Through Hole

Package-Case: TO-220-3

Technology: Si

Number-of-Channels: 1 Channel

Configuration: Single

Transistor-Type: 1 N-Channel

Pd-Power-Dissipation: 167 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 60 ns

Rise-Time: 100 ns

Vgs-Gate-Source-Voltage: 30 V

Id-Continuous-Drain-Current: 6.6 A

Vds-Drain-Source-Breakdown-Voltage: 800 V

Rds-On-Drain-Source-Resistance: 1.9 Ohms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 50 ns

Typical-Turn-On-Delay-Time: 35 ns

Forward-Transconductance-Min: 5.5 S

Channel-Mode: Enhancement

Tags: FQP7N80C, FQP7N8, FQP7N, FQP7, FQP

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

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FQP7N80C Description

***Components: In a Pack of 5, N-Channel MOSFET, 6.6 A, 800 V, 3-Pin TO-220AB ON Semiconductor FQP7N80C

***Semiconductor: Power MOSFET, N-Channel, QFET®, 800 V, 7 A, 1.9 Ω, TO-220

***p One Stop Japan: Trans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: N-Channel 800 V 1.9 Ohm Flange Mount Mosfet - TO-220-3

***i-Key: MOSFET N-CH 800V 6.6A TO-220

***ark: Qfc 800V 1.9Ohm To220 Rohs Compliant: Yes

***ser: MOSFETs 800V N-Ch Q-FET advance C-Series

***inecomponents.com: 800V N-Channel Advance QFET® C-Series

***eco: 3 LEAD PLASTIC W/EXPOSED HEATSNK

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***nell: MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:6.6A; Resistance, Rds On:1.57ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:26.4A; External Length / Height:4.83mm; No. of Pins:3; Power Dissipation:167W; Power, Pd:167W; Resistance, Rds on Max:1.9ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:800V; Voltage, Vgs th Max:5V; Width, External:10.67mm

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:6.6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.57ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:167W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.6A; Current Temperature:25°C; External Length / Height:4.83mm; External Width:10.67mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:1.9ohm; Package / Case:TO-220; Power Dissipation Pd:167W; Power Dissipation Pd:167W; Pulse Current Idm:26.4A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

Market price

Part #	Mfg.	Description	Stock	Price
FQP7N80C DISTI # V36:1790_06359748	ON Semiconductor	QFC 800V 1.9OHM TO220	8600	5000:$0.7437 2000:$0.7846 1000:$0.8719 500:$1.0713 100:$1.2929 10:$1.5492 1:$1.7748
FQP7N80C DISTI # FQP7N80C-ND	ON Semiconductor	MOSFET N-CH 800V 6.6A TO-220 RoHS: Compliant Min Qty: 1 Container: Tube	389In Stock	1000:$1.2106 500:$1.4611 100:$1.8785 10:$2.3380 1:$2.5900
FQP7N80C DISTI # 30333733	ON Semiconductor	QFC 800V 1.9OHM TO220	8600	2000:$0.7846 1000:$0.8719 500:$1.0713 100:$1.2929 10:$1.5492 8:$1.7748
FQP7N80C DISTI # FQP7N80C	ON Semiconductor	Trans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP7N80C) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 525	1000:$0.9039 2000:$0.8799 4000:$0.8569 6000:$0.8349 10000:$0.8139
FQP7N80C DISTI # FQP7N80C	ON Semiconductor	Trans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP7N80C) RoHS: Compliant Min Qty: 1	Europe - 500	1:€1.4339 10:€1.1729 25:€1.0029 50:€0.9099 100:€0.8959 500:€0.8819 1000:€0.8689
FQP7N80C DISTI # FQP7N80C	ON Semiconductor	Trans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP7N80C) RoHS: Compliant Min Qty: 1000	Asia - 5000	1000:$0.9900 2000:$0.9519 3000:$0.9167 5000:$0.8839 10000:$0.8535 25000:$0.8250 50000:$0.8115
FQP7N80C DISTI # 97K0195	ON Semiconductor	MOSFET, N, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:6.6A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1.57ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation Pd:167W RoHS Compliant: Yes	354	1:$2.3700 10:$2.0200 100:$1.6400 500:$1.4400 1000:$1.2000 2500:$1.1200 5000:$1.0900
FQP7N80C. DISTI # 29AC6380	Fairchild Semiconductor Corporation	QFC 800V 1.9OHM TO220 ROHS COMPLIANT: YES	525	1:$2.3700 10:$2.0200 100:$1.6400 500:$1.4400 1000:$1.2000 2500:$1.1200 5000:$1.0900
FQP7N80C DISTI # 512-FQP7N80C	ON Semiconductor	MOSFET 800V N-Ch Q-FET advance C-Series RoHS: Compliant	260	1:$2.2300 10:$1.8900 100:$1.5100 500:$1.3200 1000:$1.1000
FQP7N80C	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 6.6A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	11110	1000:$1.1700 500:$1.2300 100:$1.2800 25:$1.3400 1:$1.4400
FQP7N80C	Fairchild Semiconductor Corporation		100
FQP7N80C DISTI # 6715180P	ON Semiconductor	MOSFET N-CHANNEL 800V 6.6A TO220AB, TU	1269	50:£1.4260 100:£1.3700
FQP7N80C DISTI # 6715180	ON Semiconductor	MOSFET N-CHANNEL 800V 6.6A TO220AB, PK	75	5:£1.4860 50:£1.4260 100:£1.3700
FQP7N80C	Fairchild Semiconductor Corporation	6.6A, 800V, 1.9OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB	49
FQP7N80C DISTI # 1095073	ON Semiconductor	MOSFET, N, TO-220 RoHS: Compliant	354	1:$3.5300 10:$3.0000 100:$2.4000 500:$2.0900 1000:$1.7500 2000:$1.6200 5000:$1.5700 10000:$1.5100
FQP7N80C DISTI # C1S541901511605	ON Semiconductor	Trans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	8600	1000:$0.8717 500:$1.0330 100:$1.2926 10:$1.5603
FQP7N80C DISTI # 1095073	ON Semiconductor	MOSFET, N, TO-220 RoHS: Compliant	358	1:£1.5900 10:£1.2200 100:£0.9440 250:£0.8850 500:£0.8250

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	Mfr.#: FQP7N80C OMO.#: OMO-FQP7N80C-ON-SEMICONDUCTOR	Darlington Transistors MOSFET 800V N-Ch Q-FET advance C-Series

FQP7N80C

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes