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IS66WVE4M16TBLL-70BLI-TR

IS66WVE4M16TBLL-70BLI-TR
Mfr. #:
IS66WVE4M16TBLL-70BLI-TR
Manufacturer:
ISSI
Description:
SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V~3.6V, VDDQ 2.7V~3.6V,48 Ball BGA (6x8 mm), RoHS
Lifecycle:
New from this manufacturer.
Datasheet:
IS66WVE4M16TBLL-70BLI-TR Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IS66WVE4M16TBLL-70BLI-TR more Information
Product Attribute
Attribute Value
Manufacturer:
ISSI
Product Category:
SRAM
RoHS:
Y
Memory Size:
64 Mbit
Organization:
4 M x 16
Access Time:
70 ns
Interface Type:
Parallel
Supply Voltage - Max:
3.6 V
Supply Voltage - Min:
2.7 V
Supply Current - Max:
30 mA
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 85 C
Mounting Style:
SMD/SMT
Package / Case:
TFBGA-48
Packaging:
Reel
Memory Type:
SDR
Series:
IS66WVE4M16TBLL
Type:
Asynchronous
Brand:
ISSI
Moisture Sensitive:
Yes
Product Type:
SRAM
Factory Pack Quantity:
2500
Subcategory:
Memory & Data Storage
Tags
IS66WVE4, IS66WVE, IS66WV, IS66W, IS66, IS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
PSRAM Async 64M-Bit 4M x 16 70ns 48-Pin TFBGA T/R
***ark
64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V
***i-Key
IC PSRAM 64M PARALLEL 48BGA
Pseudo SRAM/CellularRAM
ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has a SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature which does not require physical refresh. These CellularRAM devics are designed in accordance to the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.
Image Part # Description
IS66WVE4M16TBLL-70BLI

Mfr.#: IS66WVE4M16TBLL-70BLI

OMO.#: OMO-IS66WVE4M16TBLL-70BLI

 SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V~3.6V, VDDQ 2.7V~3.6V,48 Ball BGA (6x8 mm), RoHS
IS66WVE4M16TBLL-70BLI-TR

Mfr.#: IS66WVE4M16TBLL-70BLI-TR

OMO.#: OMO-IS66WVE4M16TBLL-70BLI-TR

 SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V~3.6V, VDDQ 2.7V~3.6V,48 Ball BGA (6x8 mm), RoHS
IS66WVE4M16TBLL-70BLI

Mfr.#: IS66WVE4M16TBLL-70BLI

OMO.#: OMO-IS66WVE4M16TBLL-70BLI-INTEGRATED-SILICON-SOLUTION

 SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V 3.6V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS
Availability
Stock:
Available
On Order:
4000
Enter Quantity:
Current price of IS66WVE4M16TBLL-70BLI-TR is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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