CSD17308Q3T

Product Attribute

Attribute Value

Manufacturer:

Texas Instruments

Product Category:

MOSFET

RoHS:

N

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

VSON-Clip-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

60 A

Rds On - Drain-Source Resistance:

11.8 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.3 V

Vgs - Gate-Source Voltage:

10 V, 8 V

Qg - Gate Charge:

3.9 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

28 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

NexFET

Packaging:

Reel

Height:

1 mm

Length:

3.3 mm

Series:

CSD17308Q3

Transistor Type:

1 N-Channel

Width:

3.3 mm

Brand:

Texas Instruments

Forward Transconductance - Min:

37 S

Fall Time:

2.3 ns

Product Type:

MOSFET

Rise Time:

5.7 ns

Factory Pack Quantity:

250

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

9.9 ns

Typical Turn-On Delay Time:

4.5 ns

Unit Weight:

0.001365 oz

Tags

CSD17308Q, CSD17308, CSD1730, CSD173, CSD17, CSD1, CSD