PartNumber | CSD17301Q5A | CSD17302Q5A | CSD17302 |
Description | MOSFET 30V N Channel NexFET Pwr MOSFET | MOSFET 30V N Channel NexFET Power MOSFET | |
Manufacturer | Texas Instruments | Texas Instruments | TI |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | E | E | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | VSONP-8 | VSONP-8 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
Id Continuous Drain Current | 100 A | 100 A | - |
Rds On Drain Source Resistance | 3 mOhms | 9 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.1 V | 1.2 V | - |
Vgs Gate Source Voltage | 10 V | 10 V | - |
Qg Gate Charge | 19 nC | 5.4 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 3.2 W | 3 W | - |
Configuration | Single | Single | Single |
Tradename | NexFET | NexFET | NexFET |
Packaging | Reel | Reel | Reel |
Height | 1 mm | 1 mm | - |
Length | 6 mm | 6 mm | - |
Series | CSD17301Q5A | CSD17302Q5A | CSD17302Q5A |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | Driver | - | - |
Width | 4.9 mm | 4.9 mm | - |
Brand | Texas Instruments | Texas Instruments | - |
Fall Time | 10.5 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 16.2 ns | - | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Unit Weight | 0.003527 oz | - | - |
Forward Transconductance Min | - | 68 S | - |
Typical Turn Off Delay Time | - | 10.6 ns | 10.6 ns |
Typical Turn On Delay Time | - | 5.2 ns | 5.2 ns |
Package Case | - | - | VSON-FET-8 |
Pd Power Dissipation | - | - | 3 W |
Vgs Gate Source Voltage | - | - | 10 V |
Id Continuous Drain Current | - | - | 16 A |
Vds Drain Source Breakdown Voltage | - | - | 30 V |
Vgs th Gate Source Threshold Voltage | - | - | 1.2 V |
Rds On Drain Source Resistance | - | - | 9 mOhms |
Qg Gate Charge | - | - | 5.4 nC |
Forward Transconductance Min | - | - | 68 S |