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BSC061N08NS5ATMA1

BSC061N08NS5ATMA1
Mfr. #:
BSC061N08NS5ATMA1
Manufacturer:
Infineon Technologies
Description:
RF Bipolar Transistors MOSFET N-Ch 80V 82A TDSON-8
Lifecycle:
New from this manufacturer.
Datasheet:
BSC061N08NS5ATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
BSC061N08NS5ATMA1 more Information
Product Attribute
Attribute Value
Manufacturer
Infineon Technologies
Product Category
Transistors - FETs, MOSFETs - Single
Packaging
Reel
Part-Aliases
BSC061N08NS5 SP001232634
Unit-Weight
0.017870 oz
Mounting-Style
SMD/SMT
Package-Case
TDSON-8
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
74 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
5 ns
Rise-Time
6 ns
Vgs-Gate-Source-Voltage
+/- 20 V
Id-Continuous-Drain-Current
82 A
Vds-Drain-Source-Breakdown-Voltage
80 V
Vgs-th-Gate-Source-Threshold-Voltage
2.2 V
Rds-On-Drain-Source-Resistance
9 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
19 ns
Typical-Turn-On-Delay-Time
11 ns
Qg-Gate-Charge
27 nC
Forward-Transconductance-Min
32 S
Channel-Mode
Enhancement
Tags
BSC06, BSC0, BSC
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 80V 82A Automotive 8-Pin TDSON EP T/R
***ark
Mosfet, N-Ch, 80V, 82A, Tdson; Transistor Polarity:n Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:82A; On Resistance Rds(On):0.0052Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Part # Mfg. Description Stock Price
BSC061N08NS5ATMA1
DISTI # V72:2272_06383938		Infineon Technologies AGTrans MOSFET N-CH 80V 82A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		3
  • 1:$1.7454
BSC061N08NS5ATMA1
DISTI # V36:1790_06383938		Infineon Technologies AGTrans MOSFET N-CH 80V 82A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		0
    BSC061N08NS5ATMA1
    DISTI # BSC061N08NS5ATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 80V 82A 8TDSON
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape & Reel (TR)    		On Order
    • 10000:$0.7561
    • 5000:$0.7723
    BSC061N08NS5ATMA1
    DISTI # BSC061N08NS5ATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 80V 82A 8TDSON
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 1000:$0.8873
    • 500:$1.0709
    • 100:$1.3034
    • 10:$1.6220
    • 1:$1.8100
    BSC061N08NS5ATMA1
    DISTI # BSC061N08NS5ATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 80V 82A 8TDSON
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 1000:$0.8873
    • 500:$1.0709
    • 100:$1.3034
    • 10:$1.6220
    • 1:$1.8100
    BSC061N08NS5ATMA1
    DISTI # BSC061N08NS5ATMA1    		Infineon Technologies AGTrans MOSFET N-CH 80V 19A 8-Pin TDSON EP - Tape and Reel (Alt: BSC061N08NS5ATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 50000:$0.6859
    • 30000:$0.6979
    • 20000:$0.7229
    • 10000:$0.7499
    • 5000:$0.7779
    BSC061N08NS5ATMA1
    DISTI # SP001232634    		Infineon Technologies AGTrans MOSFET N-CH 80V 19A 8-Pin TDSON EP (Alt: SP001232634)
    RoHS: Compliant
    Min Qty: 5000    		Europe - 0
    • 50000:€0.6289
    • 30000:€0.6779
    • 20000:€0.7339
    • 10000:€0.8009
    • 5000:€0.9789
    BSC061N08NS5ATMA1
    DISTI # 49AC0105    		Infineon Technologies AGMOSFET, N-CH, 80V, 82A, TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:82A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0052ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes135
    • 1000:$0.7920
    • 500:$0.9550
    • 250:$1.0200
    • 100:$1.0900
    • 50:$1.1800
    • 25:$1.2700
    • 10:$1.3600
    • 1:$1.6000
    BSC061N08NS5ATMA1
    DISTI # 726-BSC061N08NS5ATMA    		Infineon Technologies AGMOSFET N-Ch 80V 82A TDSON-8
    RoHS: Compliant    		0
    • 1:$1.5800
    • 10:$1.3500
    • 100:$1.0800
    • 500:$0.9460
    • 1000:$0.7840
    • 2500:$0.7300
    • 5000:$0.7030
    • 10000:$0.6760
    BSC061N08NS5ATMA1
    DISTI # 2839430    		Infineon Technologies AGMOSFET, N-CH, 80V, 82A, TDSON-8
    RoHS: Compliant    		135
    • 5000:$1.2500
    • 1000:$1.3200
    • 500:$1.3900
    • 250:$1.6100
    • 100:$1.9100
    • 25:$2.3400
    • 5:$2.6800
    BSC061N08NS5ATMA1
    DISTI # 2839430    		Infineon Technologies AGMOSFET, N-CH, 80V, 82A, TDSON-8803
    • 100:£1.0500
    • 25:£1.3100
    • 5:£1.4400
    Image Part # Description
    BSC061N08NS5ATMA1

    Mfr.#: BSC061N08NS5ATMA1

    OMO.#: OMO-BSC061N08NS5ATMA1

    		 MOSFET N-Ch 80V 82A TDSON-8
    BSC061N08NS5

    Mfr.#: BSC061N08NS5

    OMO.#: OMO-BSC061N08NS5-1190

    		 New and Original
    BSC061N08NS5ATMA1

    Mfr.#: BSC061N08NS5ATMA1

    OMO.#: OMO-BSC061N08NS5ATMA1-INFINEON-TECHNOLOGIES

    		 RF Bipolar Transistors MOSFET N-Ch 80V 82A TDSON-8
    Availability
    Stock:
    Available
    On Order:
    5500
    Enter Quantity:
    Current price of BSC061N08NS5ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.01
    $1.01
    10
    $0.96
    $9.63
    100
    $0.91
    $91.26
    500
    $0.86
    $430.95
    1000
    $0.81
    $811.20
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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