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NGTB30N120IHRWG

NGTB30N120IHRWG
Mfr. #:
NGTB30N120IHRWG
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 1200V/30A RC IGBT FSII
Lifecycle:
New from this manufacturer.
Datasheet:
NGTB30N120IHRWG Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
NGTB30N120IHRWG more Information
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-247
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1200 V
Collector-Emitter Saturation Voltage:
2.2 V
Maximum Gate Emitter Voltage:
25 V
Continuous Collector Current at 25 C:
60 A
Pd - Power Dissipation:
384 W
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 175 C
Series:
NGTB30N120IHR
Packaging:
Tube
Brand:
ON Semiconductor
Gate-Emitter Leakage Current:
100 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
30
Subcategory:
IGBTs
Unit Weight:
0.229281 oz
Tags
NGTB30N120I, NGTB30N12, NGTB30N1, NGTB30, NGTB3, NGTB, NGT
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 60A 384000mW 3-Pin(3+Tab) TO-247 Tube
***Semiconductor
IGBT, 1200V 30A FS2-RC Induction Heating
***nell
TRANSISTOR, IGBT, 2.2V, 60A, TO-247-3
***ark
Transistor, Igbt, 2.2V, 60A, To-247-3; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):2.2V; Power Dissipation Pd:384W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins;rohs Compliant: Yes
NGTB 25-75A Insulated Gate Bipolar Transistors
ON Semiconductor NGTB 25-75A Insulated Gate Bipolar Transistors feature a robust and cost effective Trench construction. They provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. These IGBTs are well suited for welding applications. Incorporated into the device is a soft and fast co−packaged  free wheeling diode with a low forward voltage.Learn More
Part # Mfg. Description Stock Price
NGTB30N120IHRWG
DISTI # V99:2348_07300156		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		22
  • 1000:$2.5240
  • 500:$2.9130
  • 100:$3.2060
  • 10:$3.5990
  • 1:$4.1000
NGTB30N120IHRWG
DISTI # NGTB30N120IHRWGOS-ND		ON SemiconductorIGBT 1200V 60A 384W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		210In Stock
  • 1020:$2.6313
  • 510:$3.1200
  • 120:$3.6650
  • 30:$4.2290
  • 1:$4.9800
NGTB30N120IHRWG
DISTI # 28972727		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		32040
  • 180:$2.9750
NGTB30N120IHRWG
DISTI # 25863340		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		22
  • 10:$3.5990
  • 3:$4.1000
NGTB30N120IHRWG
DISTI # NGTB30N120IHRWG		ON SemiconductorTrans IGBT Chip N-CH 1.2kV 60A 3-Pin TO-247 Rail (Alt: NGTB30N120IHRWG)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€2.7900
  • 10:€2.5900
  • 25:€2.4900
  • 50:€2.3900
  • 100:€2.2900
  • 500:€2.1900
  • 1000:€2.0900
NGTB30N120IHRWG
DISTI # 80Y3319		ON SemiconductorTRANSISTOR, IGBT, 2.2V, 60A, TO-247-3,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):2.2V,Power Dissipation Pd:384W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins, , RoHS Compliant: Yes90
  • 1:$4.7400
  • 10:$4.0300
  • 25:$3.8500
  • 50:$3.6800
  • 100:$3.5000
NGTB30N120IHRWG
DISTI # 863-NGTB30N120IHRWG		ON SemiconductorIGBT Transistors 1200V/30A RC IGBT FSII
RoHS: Compliant		95
  • 1:$4.7400
  • 10:$4.0300
  • 100:$3.5000
  • 250:$3.3200
  • 500:$2.9800
  • 1000:$2.5100
  • 2500:$2.3900
NGTB30N120IHRWG
DISTI # 7961331P		ON SemiconductorIGBT 1200V 30A FIELD STOPDIODE TO247, TU112
  • 6:£3.2950
  • 12:£3.0300
  • 40:£2.8750
  • 80:£2.7950
NGTB30N120IHRWG
DISTI # 7961331		ON SemiconductorIGBT 1200V 30A FIELD STOPDIODE TO247, PK26
  • 2:£3.8100
  • 6:£3.2950
  • 12:£3.0300
  • 40:£2.8750
  • 80:£2.7950
NGTB30N120IHRWG
DISTI # 2399110		ON SemiconductorTRANSISTOR, IGBT, 2.2V, 60A, TO-247-3
RoHS: Compliant		90
  • 1:£4.4900
  • 10:£3.2500
  • 100:£2.8200
  • 250:£2.6700
  • 500:£2.5200
NGTB30N120IHRWG
DISTI # 2399110		ON SemiconductorTRANSISTOR, IGBT, 2.2V, 60A, TO-247-3
RoHS: Compliant		90
  • 1:$7.5000
  • 10:$6.3800
  • 100:$5.5400
NGTB30N120IHRWG
DISTI # C1S541900938258		ON SemiconductorTrans IGBT Chip N-CH 1200V 60A 384000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		22
  • 10:$3.5990
  • 1:$4.1000
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Availability
Stock:
100
On Order:
2083
Enter Quantity:
Current price of NGTB30N120IHRWG is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$4.73
$4.73
10
$4.02
$40.20
100
$3.49
$349.00
250
$3.31
$827.50
500
$2.97
$1 485.00
1000
$2.50
$2 500.00
2500
$2.38
$5 950.00
5000
$2.29
$11 450.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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