PartNumber | NGTB30N120FL2WG | NGTB30N120IHRWG | NGTB30N120L2WG |
Description | IGBT Transistors 1200V/30A FAST IGBT FSII | IGBT Transistors 1200V/30A RC IGBT FSII | IGBT Transistors 1200V/30A LOW VCE SAT FSII |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Package / Case | TO-247 | TO-247 | TO-247 |
Mounting Style | Through Hole | Through Hole | Through Hole |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | 1200 V |
Collector Emitter Saturation Voltage | 2 V | 2.2 V | 1.7 V |
Maximum Gate Emitter Voltage | 30 V | 25 V | 30 V |
Continuous Collector Current at 25 C | 60 A | 60 A | 60 A |
Pd Power Dissipation | 452 W | 384 W | 534 W |
Minimum Operating Temperature | - 55 C | - 40 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Series | NGTB30N120FL2 | NGTB30N120IHR | NGTB30N120L2 |
Packaging | Tube | Tube | Tube |
Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Gate Emitter Leakage Current | 200 nA | 100 nA | 200 nA |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | 0.229281 oz | 0.229281 oz | 0.229281 oz |