NGTB30N135IHR1WG

Mfr. #:: NGTB30N135IHR1WG
Manufacturer:: ON Semiconductor
Description:: IGBT Transistors 1350V/30A IGBT FSII
Lifecycle:: New from this manufacturer.
Datasheet:: NGTB30N135IHR1WG Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: NGTB30N135IHR1WG Datasheet NGTB30N135IHR1WG Datasheet (P4-P6)NGTB30N135IHR1WG Datasheet (P7-P9)
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More Information:: NGTB30N135IHR1WG more Information

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-247-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 1.35 kV

Collector-Emitter Saturation Voltage:: 2.6 V

Maximum Gate Emitter Voltage:: 25 V

Continuous Collector Current at 25 C:: 60 A

Pd - Power Dissipation:: 394 W

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 175 C

Packaging:: Tube

Brand:: ON Semiconductor

Gate-Emitter Leakage Current:: 100 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 30

Subcategory:: IGBTs

Unit Weight:: 1.340411 oz

Tags: NGTB30N1, NGTB30, NGTB3, NGTB, NGT

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

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NGTB30N135IHR1WG Description

***ical: Trans IGBT Chip N-CH 1350V 60A 394000mW 3-Pin(3+Tab) TO-247 Tube

***el Electronic: In a Pack of 2, ON Semiconductor NGTB30N135IHR1WG IGBT, 60 A 1350 V, 3-Pin TO-247

***emi: IGBT, 1350V 30A with Monolithic Free Wheeling Diode.

***ark: Igbt, Single, N-Ch, 1.35Kv, 60A, To-247; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):2.4V; Power Dissipation Pd:394W; Collector Emitter Voltage V(Br)Ceo:1.35Kv; Transistor Case Style:to-247; No. Of Rohs Compliant: Yes

***ical: Trans IGBT Chip N-CH 1200V 60A 305000mW 3-Pin(3+Tab) TO-247AC Tube

*** Electronic Components: IGBT Transistors 1200V IGBT GEN8

***or: IRG8P40N120 - DISCRETE IGBT WITH

***ark: G8, 1200V, 40A, COPAK-247AC, TUBE

***el Electronic: CAP CER 4PF 100V C0G/NP0 RADIAL

***icroelectronics: 30 A, 1200 V short circuit rugged IGBT with Ultrafast diode

***et: Trans IGBT Chip N-CH 1.2KV 60A 3-Pin(3+Tab) TO-247 Tube

***r Electronics: Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, TO-247

*** Electronic Components: IGBT Transistors 30A 1200V short circuit rugged IGBT

***ical: Trans IGBT Chip N-CH 1000V 60A 412000mW Automotive 3-Pin(3+Tab) TO-247 Tube

***ark: Transistor, Igbt, 1Kv, 60A, To-247; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):1.55V; Power Dissipation Pd:412W; Collector Emitter Voltage V(Br)Ceo:1Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

***ical: Trans IGBT Chip N=-CH 1500V 60A 500000mW 3-Pin(3+Tab) TO-247 Rail

***ark: 1500V 30A FS SA Trench IGBT - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB

***rchild Semiconductor: Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conductionand switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.

***ical: Trans IGBT Chip N-CH 1.2KV 60A 3-Pin(3+Tab) TO-247AB Rail

***et: IGBT Transistors N-CH/1200V 30A FS Trench

***i-Key: IGBT 1200V 60A 339W TO247

***horized Procurement Solutions: OEMs, CMs ONLY (NO BROKERS)

***i-Key Marketplace: N-CHANNEL IGBT

***ical: Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube

***r Electronics: Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247

***ark: 1200V/25 Fast Igbt Only Fsii To-247 / Tube

NGTB30N135IHR1WG More Information

NGTB 25-75A Insulated Gate Bipolar Transistors: ON Semiconductor NGTB 25-75A Insulated Gate Bipolar Transistors feature a robust and cost effective Trench construction. They provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. These IGBTs are well suited for welding applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
NGTB30N135IHR1WG DISTI # V99:2348_14070698	ON Semiconductor	Trans IGBT Chip N-CH 1.35KV 60A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	77	500:$2.9730 250:$3.3190 100:$3.4290 10:$4.0250 1:$5.2008
NGTB30N135IHR1WG DISTI # V36:1790_14070698	ON Semiconductor	Trans IGBT Chip N-CH 1.35KV 60A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	0
NGTB30N135IHR1WG DISTI # NGTB30N135IHR1WGOS-ND	ON Semiconductor	IGBT 1350V 30A TO247 RoHS: Compliant Min Qty: 1 Container: Tube	84In Stock	2520:$1.4112 510:$1.7569 120:$2.0639 30:$2.3813 10:$2.5190 1:$2.8000
NGTB30N135IHR1WG DISTI # 30184893	ON Semiconductor	Trans IGBT Chip N-CH 1.35KV 60A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	180	180:$2.6106
NGTB30N135IHR1WG DISTI # 25887315	ON Semiconductor	Trans IGBT Chip N-CH 1.35KV 60A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	77	3:$5.2008
NGTB30N135IHR1WG DISTI # 30613139	ON Semiconductor	Trans IGBT Chip N-CH 1.35KV 60A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	18	12:$2.2500
NGTB30N135IHR1WG DISTI # NGTB30N135IHR1WG	ON Semiconductor	Trans IGBT Chip N-CH 1350V 60A 3-Pin TO-247 T/R (Alt: NGTB30N135IHR1WG) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	50:€1.2900 100:€1.2900 500:€1.2900 1000:€1.2900 25:€1.4900 10:€1.6900 1:€2.0900
NGTB30N135IHR1WG DISTI # NGTB30N135IHR1WG	ON Semiconductor	Trans IGBT Chip N-CH 1350V 60A 3-Pin TO-247 T/R - Rail/Tube (Alt: NGTB30N135IHR1WG) RoHS: Compliant Min Qty: 180 Container: Tube	Americas - 0	540:$1.1900 900:$1.1900 1800:$1.1900 180:$1.2900 360:$1.2900
NGTB30N135IHR1WG DISTI # 81Y3909	ON Semiconductor	1350V/30A IGBT FSII TO-24 / TUBE	0	1000:$3.2800 500:$3.4800 250:$3.7300 100:$4.0500 1:$4.9200
NGTB30N135IHR1WG DISTI # 863-NGTB30N135IHR1WG	ON Semiconductor	IGBT Transistors 1350V/30A IGBT FSII RoHS: Compliant	209	1:$4.7600 10:$4.0500 100:$3.5100 250:$3.3300 500:$2.9800
NGTB30N135IHR1WG DISTI # 9229550P	ON Semiconductor	IGBT & FW DIODE 1350V 30A TO-247, TU	78	300:£2.5050 100:£2.6350 40:£2.8350 10:£3.0350
NGTB30N135IHR1WG DISTI # 2706268	ON Semiconductor	IGBT, SINGLE, N-CH, 1.35KV, 60A, TO-247 RoHS: Compliant	0	2520:$3.8000 510:$4.7300 120:$5.5600 30:$6.4100 10:$6.7800 1:$7.5500
NGTB30N135IHR1WG DISTI # 2706268	ON Semiconductor	IGBT, SINGLE, N-CH, 1.35KV, 60A, TO-247	6	500:£2.3000 250:£2.5800 100:£2.7100 10:£3.1200 1:£4.0900

Image	Part #	Description
	Mfr.#: DB2232000L OMO.#: OMO-DB2232000L	Schottky Diodes & Rectifiers SCHOTTKY BARRIER FLT LD 1.6x3.5mm
	Mfr.#: UCC27519DBVT OMO.#: OMO-UCC27519DBVT	Gate Drivers 4A/4A Sgl Ch Hi-Spd Low-side Gate Driver
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	Mfr.#: DZ2S130M0L OMO.#: OMO-DZ2S130M0L	Zener Diodes 13V 2.5% 150mW FLT LD 0.8x1.6mm
	Mfr.#: APT30D120BCTG OMO.#: OMO-APT30D120BCTG	Rectifiers FG, FRED, 1200V, 30A, TO-247, RoHS
	Mfr.#: BU4S584G2-TR OMO.#: OMO-BU4S584G2-TR	Inverters IC SCHMITT TRIGGER SINGLE
	Mfr.#: EKZN250ELL151MF11D OMO.#: OMO-EKZN250ELL151MF11D	Aluminum Electrolytic Capacitors - Radial Leaded 25V 150uF 20% Tol.
	Mfr.#: ERJ-6GEYJ681V OMO.#: OMO-ERJ-6GEYJ681V	Thick Film Resistors - SMD 0805 680ohms 5% AEC-Q200
	Mfr.#: 1-1318301-5 OMO.#: OMO-1-1318301-5	Headers & Wire Housings 5P EP PIN HSG
	Mfr.#: APT30D120BCTG OMO.#: OMO-APT30D120BCTG-MICROSEMI	Rectifiers

NGTB30N135IHR1WG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes