NGTB30N135IHR1WG
www.onsemi.com
5
TYPICAL CHARACTERISTICS
Figure 13. Switching Loss vs. R
g
R
g
, GATE RESISTOR (W)
453525155
5.0
SWITCHING LOSS (mJ)
55 65
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150°C
I
C
= 30 A
75
E
off
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150°C
I
C
= 30 A
Figure 14. Switching Time vs. R
g
R
g
, GATE RESISTOR (W)
453525155
10000
SWITCHING TIME (ns)
55 65 75 85
1000
100
10
t
f
t
d(off)
Figure 15. Switching Loss vs. V
CE
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
450400350
SWITCHING LOSS (mJ)
500 700 750 800550 600 650
I
C
= 30 A
V
GE
= 15 V
T
J
= 150°C
Rg = 10 W
E
off
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
550500450
SWITCHING TIME (ns)
600 650 750 800
1000
100
10
350 400
Figure 16. Switching Time vs. V
CE
I
C
= 30 A
V
GE
= 15 V
T
J
= 150°C
Rg = 10 W
t
d(off)
t
f
Figure 17. Safe Operating Area
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
2000200202
0.1
1
10
100
1000
50 ms
100 ms
1 ms
dc operation
Single Nonrepetitive
Pulse T
C
= 25°C
Curves must be derated
linearly with increase
in temperature
Figure 18. Reverse Bias Safe Operating Area
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
1000100101
1
10
100
1000
V
GE
= 15 V, T
C
= 150°C
700
4.5
2.0
1.5
1.0
0.5
0
2.25
2.00
1.75
1.50
1.25
1.00
2.5
4.0
3.5
3.0
10000
