NGTB30N60SWG

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

IGBT Transistors

RoHS:

Y

Technology:

Si

Package / Case:

TO-247-3

Mounting Style:

Through Hole

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

600 V

Collector-Emitter Saturation Voltage:

2.6 V

Maximum Gate Emitter Voltage:

20 V

Continuous Collector Current at 25 C:

60 A

Pd - Power Dissipation:

189 W

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Packaging:

Tube

Continuous Collector Current Ic Max:

60 A

Brand:

ON Semiconductor

Gate-Emitter Leakage Current:

100 nA

Product Type:

IGBT Transistors

Factory Pack Quantity:

30

Subcategory:

IGBTs

Unit Weight:

1.340411 oz

Tags

NGTB30N60, NGTB30N6, NGTB30, NGTB3, NGTB, NGT