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NGTB30N120FL2WG

NGTB30N120FL2WG
Mfr. #:
NGTB30N120FL2WG
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 1200V/30A FAST IGBT FSII
Lifecycle:
New from this manufacturer.
Datasheet:
NGTB30N120FL2WG Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTB30N120FL2WG DatasheetNGTB30N120FL2WG Datasheet (P4-P6)NGTB30N120FL2WG Datasheet (P7-P8)
ECAD Model:
More Information:
NGTB30N120FL2WG more Information
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-247
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1200 V
Collector-Emitter Saturation Voltage:
2 V
Maximum Gate Emitter Voltage:
30 V
Continuous Collector Current at 25 C:
60 A
Pd - Power Dissipation:
452 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Series:
NGTB30N120FL2
Packaging:
Tube
Brand:
ON Semiconductor
Gate-Emitter Leakage Current:
200 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
30
Subcategory:
IGBTs
Unit Weight:
0.229281 oz
Tags
NGTB30N12, NGTB30N1, NGTB30, NGTB3, NGTB, NGT
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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1.2KV 60A 3-Pin(3+Tab) TO-247 Tube
***Semiconductor
IGBT, 1200V 30A FS2 Solar/UPS
***i-Key
IGBT 1200V 60A 452W TO247
***S
new, original packaged
NGTB 25-75A Insulated Gate Bipolar Transistors
ON Semiconductor NGTB 25-75A Insulated Gate Bipolar Transistors feature a robust and cost effective Trench construction. They provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. These IGBTs are well suited for welding applications. Incorporated into the device is a soft and fast co−packaged  free wheeling diode with a low forward voltage.Learn More
NGTBxxN120L Motor Drive IGBTs
ON Semiconductor's NGTBxxN120L Motor Drive IGBTs feature a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. They are available 1200 V in 15 A, 20 A and 25 A rated versions. These IGBTs are well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage.Learn More
Part # Mfg. Description Stock Price
NGTB30N120FL2WG
DISTI # NGTB30N120FL2WGOS-ND		ON SemiconductorIGBT 1200V 60A 452W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		42In Stock
  • 2520:$3.1304
  • 510:$3.9071
  • 120:$4.5897
  • 30:$5.2957
  • 10:$5.6020
  • 1:$6.2400
NGTB30N120FL2WG
DISTI # NGTB30N120FL2WG		ON SemiconductorTrans IGBT Chip N-CH 1200V 60A 3-Pin TO-247 Rail - Bulk (Alt: NGTB30N120FL2WG)
RoHS: Compliant
Min Qty: 66
Container: Bulk		Americas - 0
  • 660:$4.5900
  • 198:$4.7900
  • 330:$4.7900
  • 66:$4.8900
  • 132:$4.8900
NGTB30N120FL2WG
DISTI # NGTB30N120FL2WG		ON SemiconductorTrans IGBT Chip N-CH 1200V 60A 3-Pin TO-247 Rail (Alt: NGTB30N120FL2WG)
RoHS: Compliant
Min Qty: 90		Asia - 0
  • 4500:$5.7000
  • 2250:$5.7966
  • 900:$5.8966
  • 450:$6.1071
  • 270:$6.3333
  • 180:$6.5769
  • 90:$6.8400
NGTB30N120FL2WG
DISTI # 28X8010		ON SemiconductorIGBT, SINGLE, 1.2KV, 60A, TO-247,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:452W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes0
  • 2500:$4.7200
  • 1000:$5.1000
  • 500:$5.6100
  • 250:$6.1200
  • 100:$6.6700
  • 25:$7.3600
  • 10:$8.0400
  • 1:$8.8900
NGTB30N120FL2WG
DISTI # 863-NGTB30N120FL2WG		ON SemiconductorIGBT Transistors 1200V/30A FAST IGBT FSII
RoHS: Compliant		198
  • 1:$8.1400
  • 10:$7.3600
  • 25:$7.0200
  • 100:$6.0900
NGTB30N120FL2WGON SemiconductorInsulated Gate Bipolar Transistor
RoHS: Compliant		3660
  • 1000:$3.2800
  • 500:$3.4500
  • 100:$3.5900
  • 25:$3.7400
  • 1:$4.0300
NGTB30N120FL2WG
DISTI # 7961337P		ON SemiconductorIGBT 1200V 30A FIELD STOP 2DIODE TO247, TU101
  • 40:£5.2650
  • 20:£5.5150
NGTB30N120FL2WG
DISTI # 2399107		ON Semiconductor 
RoHS: Compliant		0
  • 100:$9.3700
  • 25:$10.8000
  • 10:$11.3200
  • 1:$12.5200
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Availability
Stock:
198
On Order:
2181
Enter Quantity:
Current price of NGTB30N120FL2WG is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$8.14
$8.14
10
$7.36
$73.60
25
$7.02
$175.50
100
$6.09
$609.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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