NGTB30N120FL2WG
www.onsemi.com
5
TYPICAL CHARACTERISTICS
Figure 13. Switching Loss vs. Rg
Rg, GATE RESISTOR (W)
453525155
SWITCHING LOSS (mJ)
9
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150°C
I
C
= 30 A
E
off
55 65 75 85
Figure 14. Switching Time vs. Rg
Rg, GATE RESISTOR (W)
453525155
SWITCHING TIME (ns)
10000
55 65 75 85
1000
Figure 15. Switching Loss vs. V
CE
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
550500450400350
SWITCHING LOSS (mJ)
5
650 700 750 800600
E
off
V
GE
= 15 V
T
J
= 150°C
I
C
= 30 A
Rg = 10 W
Figure 16. Switching Time vs. V
CE
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
550500450400350 650 700 750 800600
SWITCHING TIME (ns)
1000
100
Figure 17. Safe Operating Area
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
1000100101
0.01
0.1
1
10
100
1000
50 ms
100 ms
1 ms
dc operation
Single Nonrepetitive
Pulse T
C
= 25°C
Curves must be derated
linearly with increase
in temperature
Figure 18. Reverse Bias Safe Operating Area
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
1
10
100
1000
V
GE
= 15 V, T
C
= 125°C
1000100101
E
on
t
r
t
d(on)
t
f
t
d(off)
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150°C
I
C
= 30 A
100
10
E
on
V
GE
= 15 V
T
J
= 150°C
I
C
= 30 A
Rg = 10 W
t
r
t
d(on)
t
f
t
d(off)
10
10000 10000
8
7
6
5
4
3
2
1
0
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
