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NGTB30N60L2WG

NGTB30N60L2WG
Mfr. #:
NGTB30N60L2WG
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 600V 30A IGBT TO-247
Lifecycle:
New from this manufacturer.
Datasheet:
NGTB30N60L2WG Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
NGTB30N60L2WG more Information
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Packaging:
Tube
Brand:
ON Semiconductor
Product Type:
IGBT Transistors
Factory Pack Quantity:
30
Subcategory:
IGBTs
Tags
NGTB30N60, NGTB30N6, NGTB30, NGTB3, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
IGBT, N-Channel with Low VF Switching Diode, 600V, 30A, VCE(sat)=1.4V
***et
Trans IGBT Chip N-CH 600V 100A 3-Pin TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel
***ark
Transistor, Igbt, N-Ch, 600V, 30A, To247
***el Electronic
RES SMD 1.96M OHM 1% 1/8W 0805
***nell
TRANSISTOR, IGBT, N-CH, 600V, 30A, TO247; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.4V; Power Dissipation Pd: 225mW; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ical
Trans IGBT Chip N-CH 600V 95A 330000mW 3-Pin(3+Tab) TO-247AC Tube
*** Electronic Components
IGBT Transistors 600V UltraFast IGBT TO-247
***nell
IGBT, 600V, 95A, TO-247AC-3; DC Collector Current: 95A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 330W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AC; No. of Pins: 3
***et Europe
Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247AC Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors IR IGBT 600V 600V 48A COPAK-247AC
***(Formerly Allied Electronics)
Transistor IGBT N-ch 600V 60A TO-247AC
***ineon
Target Applications: Pump; Solar; UPS; Welding
***or
IGBT W/ULTRAFAST SOFT RECOVERY D
***ical
Trans IGBT Chip N-CH 600V 120A 378000mW Automotive 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, AEC-Q101, 600V, TO247AB; DC Collector Current: 120A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 378W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AB; No.
***rchild Semiconductor
Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential.
***p One Stop
Trans IGBT Chip N-CH 600V 80A 260400mW 3-Pin(3+Tab) TO-247A
***i-Key
IGBT 600V 80A 260.4W TO247A
***nell
IGBT, HIGH SPEED, 600V, 80A, TO-247A; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 260.4W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. o
*** Electronic Components
IGBT Transistors IGBT
***S
new, original packaged
***ical
Trans IGBT Chip N-CH 600V 80A 349000mW Automotive 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AB
*** Electronic Components
IGBT Transistors 600V, 40A FIELD STOP IGBT
***i-Key
IGBT FIELD STOP 600V 80A TO247-3
***rchild Semiconductor
Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential.
NGTB 25-75A Insulated Gate Bipolar Transistors
ON Semiconductor NGTB 25-75A Insulated Gate Bipolar Transistors feature a robust and cost effective Trench construction. They provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. These IGBTs are well suited for welding applications. Incorporated into the device is a soft and fast co−packaged  free wheeling diode with a low forward voltage.Learn More
Part # Mfg. Description Stock Price
NGTB30N60L2WG
DISTI # NGTB30N60L2WG-ND		ON SemiconductorIGBT 600V 30A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1020:$2.5431
  • 510:$3.0154
  • 120:$3.5422
  • 30:$4.0870
  • 1:$4.8100
NGTB30N60L2WG
DISTI # NGTB30N60L2WG		ON SemiconductorTrans IGBT Chip N-CH 600V 100A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTB30N60L2WG)
RoHS: Compliant
Min Qty: 180
Container: Tube		Americas - 0
  • 180:$2.1900
  • 240:$2.1900
  • 420:$2.1900
  • 900:$2.0900
  • 1800:$2.0900
NGTB30N60L2WG
DISTI # 31AC0874		ON SemiconductorTRANSISTOR, IGBT, N-CH, 600V, 30A, TO247,DC Collector Current:30A,Collector Emitter Saturation Voltage Vce(on):1.4V,Power Dissipation Pd:225mW,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-247,No. of , RoHS Compliant: Yes65
  • 1:$4.5800
  • 10:$3.9000
  • 25:$3.7300
  • 50:$3.5500
  • 100:$3.3800
  • 250:$3.2100
  • 500:$2.8800
NGTB30N60L2WG
DISTI # 863-NGTB30N60L2WG		ON SemiconductorIGBT Transistors 600V 30A IGBT TO-247
RoHS: Compliant		550
  • 1:$4.5800
  • 10:$3.9000
  • 100:$3.3800
  • 250:$3.2100
  • 500:$2.8800
  • 1000:$2.4300
  • 2500:$2.3100
NGTB30N60L2WG
DISTI # 2774810		ON SemiconductorTRANSISTOR, IGBT, N-CH, 600V, 30A, TO247
RoHS: Compliant		65
  • 1:$7.1600
  • 10:$6.2400
  • 100:$5.4100
  • 250:$4.8700
  • 500:$4.2700
  • 1000:$3.8600
NGTB30N60L2WG
DISTI # 2774810		ON SemiconductorTRANSISTOR, IGBT, N-CH, 600V, 30A, TO247
RoHS: Compliant		65
  • 1:£3.8600
  • 10:£2.9500
  • 100:£2.5500
  • 250:£2.4300
  • 500:£2.1800
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Availability
Stock:
549
On Order:
2532
Enter Quantity:
Current price of NGTB30N60L2WG is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$4.58
$4.58
10
$3.90
$39.00
100
$3.38
$338.00
250
$3.21
$802.50
500
$2.88
$1 440.00
1000
$2.43
$2 430.00
2500
$2.31
$5 775.00
5000
$2.22
$11 100.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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