NGTB30N65IHL2WG

Mfr. #:: NGTB30N65IHL2WG
Manufacturer:: ON Semiconductor
Description:: IGBT Transistors 650V/30A FAST IGBT FSII T
Lifecycle:: New from this manufacturer.
Datasheet:: NGTB30N65IHL2WG Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: NGTB30N65IHL2WG more Information

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-247-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 650 V

Collector-Emitter Saturation Voltage:: 1.6 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 60 A

Pd - Power Dissipation:: 300 W

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Packaging:: Tube

Continuous Collector Current Ic Max:: 60 A

Brand:: ON Semiconductor

Gate-Emitter Leakage Current:: 100 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 30

Subcategory:: IGBTs

Unit Weight:: 0.211644 oz

Tags: NGTB30N6, NGTB30, NGTB3, NGTB, NGT

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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NGTB30N65IHL2WG Description

***ure Electronics: NGTB Series 650 V 60 A Flange Mount Trench Field Stop IGBT - TO-247

***et: Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube

***emi: IGBT, 650V 30A FS2 Induction Heating

***ark: 650V/30A FAST IGBT FSII TO-247 / TUBE ROHS COMPLIANT: YES

***r Electronics: Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel

***i-Key: IGBT TRENCH/FS 650V 60A TO247-3

***ark: Igbt Single Transistor, 60 A, 1.55 V, 258 W, 650 V, To-247, 3 Rohs Compliant: Yes

***ical: Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube

***icroelectronics: Trench gate field-stop IGBT M series, 650 V 30 A low loss

***nell: IGBT, SINGLE, 650V, 60A, TO-247-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 258W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pi

***ical: Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247AC Tube

***nell: IGBT, SINGLE, N-CH, 650V, 60A, TO-247AC; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247AC; No

***ineon: Benefits: Low VCE(ON) and Switching Losses; 5.5s Short Circuit SOA; Square RBSOA; Maximum Junction Temperature 175C; Positive VCE(ON) Temperature Coefficient; Lead-Free, RoHs compliant

***ical: Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247AC Tube

***S.I.T. Europe - USA - Asia: Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel

***ark: IGBT, SINGLE, 650V, 60A, TO-247AC

***ineon: Target Applications: Pump; Solar; UPS; Welding

***ment14 APAC: TRANSISTOR, BIPOLAR, N CHANNEL, 650V, TO-247AC

***or: IGBT W/ULTRAFAST SOFT RECOVERY D

***S: French Electronic Distributor since 1988

***ure Electronics: IRG4PC40SPbF Series 600 V 31 A N-Channel Standard Speed IGBT - TO-220AC

***p One Stop Global: Trans IGBT Chip N-CH 600V 60A 160000mW 3-Pin(3+Tab) TO-247AC Tube

***ineon SCT: 600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package, TO247-3, RoHS

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.5 V Current release time: 940 ns Power dissipation: 160 W

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:60A; Collector Emitter Saturation Voltage, Vce(sat):1.5V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes

***ment14 APAC: IGBT, 600V, 60A, TO-247AC; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:60A; Current Temperature:25°C; Device Marking:IRG4PC40SPbF; Fall Time Max:380ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:120A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***icroelectronics: Trench gate field-stop IGBT M series, 650 V 30 A low loss

***ical: Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube

***ronik: IGBT 650V 30A 1,55V TO247-3 RoHSconf

***el Electronic: Cap Ceramic 470pF 50V C0G 5% Pad SMD 0805 125C Automotive T/R

***r Electronics: Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247

***icroelectronics SCT: Short-circuit rugged IGBT, TO-247, Tube

NGTB30N65IHL2WG More Information

NGTB 25-75A Insulated Gate Bipolar Transistors: ON Semiconductor NGTB 25-75A Insulated Gate Bipolar Transistors feature a robust and cost effective Trench construction. They provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. These IGBTs are well suited for welding applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.Learn More

Motor Driver Solutions: ON Semiconductor / KEMET Motor Driver Solutions include ON Semiconductor Compact Intelligent Power Modules and KEMET's broad portfolio of capacitors. ON Semiconductor's 600V Compact Intelligent Power Modules are fully-integrated inverter power stages suitable for driving permanent magnet synchronous motors (PMSM). The modules also drive brushless-DC (BLDC) motors and AC asynchronous motors. KEMET's capacitors are suitable for harsh environments in a variety of dielectrics, terminations, and form factors offering superior performance when coupled with Intelligent Power Module motor drive systems.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
NGTB30N65IHL2WG DISTI # NGTB30N65IHL2WG-ND	ON Semiconductor	IGBT 600V 70A 300W TO247 RoHS: Compliant Min Qty: 120 Container: Tube	Temporarily Out of Stock	120:$3.3169
NGTB30N65IHL2WG DISTI # NGTB30N65IHL2WG	ON Semiconductor	Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTB30N65IHL2WG) RoHS: Compliant Min Qty: 210 Container: Tube	Americas - 0	210:$2.0900 270:$2.0900 480:$1.9900 1050:$1.9900 2100:$1.9900
NGTB30N65IHL2WG	ON Semiconductor	RoHS: Not Compliant	1159	1000:$2.6500 500:$2.7900 100:$2.9000 25:$3.0300 1:$3.2600
NGTB30N65IHL2WG DISTI # 863-NGTB30N65IHL2WG	ON Semiconductor	IGBT Transistors 650V/30A FAST IGBT FSII T RoHS: Compliant	184	1:$4.3800 10:$3.7200 100:$3.2300 250:$3.0600 500:$2.7500 1000:$2.3200 2500:$2.2000

NGTB30N65IHL2WG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes