NGTB30N65IHL2WG
http://onsemi.com
5
TYPICAL CHARACTERISTICS
5 1525354555657585
R
G
, GATE RESISTOR (W)
Figure 13. Switching Loss vs. R
G
SWITCHING LOSS (mJ)
1.0
51525354555657585
0.5
0
SWITCHING TIME (ns)
R
G
, GATE RESISTOR (W)
Figure 14. Switching Time vs. R
G
1000
100
10
t
d(off)
t
f
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. V
CE
SWITCHING LOSS (mJ)
0.50
175 225 275 325 375 425 475 525 575
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0
SWITCHING TIME (ns)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Switching Time vs. V
CE
1000
100
10
175 225 275 325 375 425 475 525 575
t
d(off)
t
f
1000
1
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
Figure 17. Safe Operating Area
10 100 1000
100
10
0.1
50 ms
100 ms
1 ms
dc operation
Single Nonrepetitive
Pulse T
C
= 25°C
Curves must be derated
linearly with increase
in temperature
Figure 18. Reverse Bias Safe Operating Area
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
1000100101
1
10
100
1000
V
GE
= 15 V, T
C
= 150°C
V
CE
= 400 V
V
GE
= 15 V
I
C
= 30 A
T
J
= 150°C
V
CE
= 400 V
V
GE
= 15 V
I
C
= 30 A
T
J
= 150°C
R
g
= 10 W
V
GE
= 15 V
I
C
= 30 A
T
J
= 150°C
0.05
R
g
= 10 W
V
GE
= 15 V
I
C
= 30 A
T
J
= 150°C
1
E
off
E
off
