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STD3NK80Z-1

STD3NK80Z-1
Mfr. #:
STD3NK80Z-1
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch, 800V-3.8ohms Zener SuperMESH 2.5A
Lifecycle:
New from this manufacturer.
Datasheet:
STD3NK80Z-1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
STD3NK80Z-1 more Information STD3NK80Z-1 Product Details
Product Attribute
Attribute Value
Manufacturer:
STMicroelectronics
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-251-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Id - Continuous Drain Current:
2.5 A
Rds On - Drain-Source Resistance:
4.5 Ohms
Vgs th - Gate-Source Threshold Voltage:
4.5 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
19 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
70 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
SuperMESH
Packaging:
Tube
Height:
6.2 mm
Length:
6.6 mm
Series:
STD3NK80Z-1
Transistor Type:
1 N-Channel
Width:
2.4 mm
Brand:
STMicroelectronics
Forward Transconductance - Min:
2.1 S
Fall Time:
40 ns
Product Type:
MOSFET
Rise Time:
27 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
36 ns
Typical Turn-On Delay Time:
17 ns
Unit Weight:
0.139332 oz
Tags
STD3NK80Z-1, STD3NK80Z, STD3NK80, STD3NK8, STD3NK, STD3N, STD3, STD
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-CHANNEL 800V - 3.8 Ohm - 2.5A IPAK Zener-Protected SuperMESH™ Power MOSFET
*** Electronics
STMICROELECTRONICS STD3NK80Z-1 Power MOSFET, N Channel, 1.25 A, 800 V, 3.8 ohm, 10 V, 3.75 V
***ark
MOSFET, N CHANNEL, 800V, 2.5A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:2.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 2.5A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***icroelectronics
N-CHANNEL 900V - 5.5 Ohm - 2.1A - DPAK ZENER-PROTECTED SUPERMESH MOSFET
***va Crawler
N-channel 900 V, 5 Ohm typ., 2.1 A SuperMESH Power MOSFET in IPAK package
***ark
MOSFET, N CHANNEL, 900V, 2.1A, IPAK; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.05A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:-RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 2.1A I(D), 900V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***icroelectronics
N-CHANNEL 800V - 3 OHM - 3A IPAK Zener-Protected SuperMESH(TM) Power MOSFET
***ure Electronics
N-Channel 800 V 3.5 Ohm Through Hole SuperMESH Power Mosfet - IPAK
***va Crawler
N-channel 800 V, 2.7 Ohm typ., 3 A SuperMESH Power MOSFET in an IPAK package
***r Electronics
Power Field-Effect Transistor, 3A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***icroelectronics
N-channel 620 V, 3 Ohm, 2.2 A, IPAK SuperMESH3(TM) Power MOSFET
***r Electronics
Power Field-Effect Transistor, 2.2A I(D), 620V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***ment14 APAC
MOSFET, N CH, 620V, 2.2A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.2A; Drain Source Voltage Vds:620V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:45W; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)
***emi
N-Channel Power MOSFET, SUPERFET® II, 800 V, 2.6 A, 2.25 Ω, IPAK
***r Electronics
Power Field-Effect Transistor, 2.6A I(D), 800V, 2.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Linghting, ATX power and industrial power applications.
***i-Key
MOSFET N-CH 600V 2.4A IPAK
***ser
MOSFETs 600V N-Channel QFET
***el Nordic
Contact for details
***emi
N-Channel Power MOSFET, SUPERFET® II, 800 V, 2 A, 3.4 Ω, IPAK
***ark
SuperFET2 800V 3400 mOhm Zener embedded, IPAK PKG - TO-251 (I-PAK) MOLDED, 3 LEAD OPTION AA
***r Electronics
Power Field-Effect Transistor, 2A I(D), 800V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Part # Mfg. Description Stock Price
STD3NK80Z-1
DISTI # 497-12557-5-ND		STMicroelectronicsMOSFET N-CH 800V 2.5A IPAK
RoHS: Compliant
Min Qty: 3000
Container: Tube		Temporarily Out of Stock
  • 3000:$0.7796
STD3NK80Z-1
DISTI # STD3NK80Z-1		STMicroelectronicsTrans MOSFET N-CH 800V 2.5A 3-Pin(3+Tab) IPAK Tube - Rail/Tube (Alt: STD3NK80Z-1)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 3000:$0.7869
  • 6000:$0.7499
  • 12000:$0.7159
  • 18000:$0.6839
  • 30000:$0.6699
STD3NK80Z-1
DISTI # 33R1154		STMicroelectronicsMOSFET, N CHANNEL, 800V, 2.5A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:2.5A,Drain Source Voltage Vds:800V,On Resistance Rds(on):3.8ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.75V,MSL:-827
  • 1:$1.7700
  • 10:$1.5300
  • 100:$1.1500
  • 500:$0.9840
  • 1000:$0.8500
  • 2500:$0.6930
  • 10000:$0.6580
STD3NK80Z-1
DISTI # 511-STD3NK80Z-1		STMicroelectronicsMOSFET N-Ch, 800V-3.8ohms Zener SuperMESH 2.5A
RoHS: Compliant		2501
  • 1:$1.5500
  • 10:$1.3200
  • 100:$1.0500
  • 500:$0.9190
  • 1000:$0.7620
  • 3000:$0.7090
  • 6000:$0.6830
  • 9000:$0.6570
STD3NK80Z-1
DISTI # 6875352P		STMicroelectronicsMOSFET N-CH 800V 2.5A SUPERMESH IPAK, TU169
  • 25:£0.9520
  • 50:£0.8560
  • 125:£0.7600
  • 250:£0.7300
STD3NK80Z-1
DISTI # XSFP00000156491		STMicroelectronicsPowerField-EffectTransistor,2.5AI(D),800V,4.5ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-251
RoHS: Compliant		20997
  • 450:$0.4500
  • 20997:$0.4091
STD3NK80Z-1
DISTI # 1752036		STMicroelectronicsMOSFET, N CH, 800V, 2.5A, IPAK
RoHS: Compliant		827
  • 1:$2.4600
  • 10:$2.0900
  • 100:$1.6600
  • 500:$1.4500
  • 1000:$1.2100
  • 3000:$1.1300
  • 6000:$1.0900
  • 9000:$1.0400
STD3NK80Z-1
DISTI # 1752036		STMicroelectronicsMOSFET, N CH, 800V, 2.5A, IPAK
RoHS: Compliant		827
  • 5:£1.2300
  • 25:£0.9130
  • 100:£0.8100
  • 250:£0.7780
  • 500:£0.7410
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Mfr.#: US1K-13-F

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Mfr.#: LTV-817S

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 Multilayer Ceramic Capacitors MLCC - SMD/SMT 2220 0.22uF 630volts X7R 10%
0312-0-15-15-34-27-10-0

Mfr.#: 0312-0-15-15-34-27-10-0

OMO.#: OMO-0312-0-15-15-34-27-10-0

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SDR0403-2R2ML

Mfr.#: SDR0403-2R2ML

OMO.#: OMO-SDR0403-2R2ML

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STRVS185X02B

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Availability
Stock:
Available
On Order:
1986
Enter Quantity:
Current price of STD3NK80Z-1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.54
$1.54
10
$1.31
$13.10
100
$1.05
$105.00
500
$0.92
$459.50
1000
$0.76
$762.00
3000
$0.71
$2 127.00
6000
$0.68
$4 098.00
9000
$0.66
$5 913.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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