CGHV14500F

CGHV14500F
Mfr. #:
CGHV14500F
Manufacturer:
N/A
Description:
RF JFET Transistors 1.2-1.4GHz 500W GaN Gain 17.1dB
Lifecycle:
New from this manufacturer.
Datasheet:
CGHV14500F Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
CGHV14500F more Information
Product Attribute
Attribute Value
Manufacturer
Wolfspeed / Cree
Product Category
Transistors - FETs, MOSFETs - Single
Packaging
Tube
Mounting-Style
Screw
Operating-Temperature-Range
-
Package-Case
440117
Technology
GaN SiC
Configuration
Single
Transistor-Type
HEMT
Gain
17.1 dB
Class
-
Output-Power
510 W
Pd-Power-Dissipation
-
Maximum-Operating-Temperature
+ 130 C
Minimum-Operating-Temperature
- 40 C
Application
-
Operating-Frequency
1.2 GHz to 1.4 GHz
Id-Continuous-Drain-Current
36 A
Vds-Drain-Source-Breakdown-Voltage
150 V
Vgs-th-Gate-Source-Threshold-Voltage
- 3 V
Rds-On-Drain-Source-Resistance
-
Transistor-Polarity
N-Channel
Forward-Transconductance-Min
-
Development-Kit
CGHV14500F-TB
Vgs-Gate-Source-Breakdown-Voltage
- 10 V to + 2 V
Gate-Source-Cutoff-Voltage
-
Maximum-Drain-Gate-Voltage
-
NF-Noise-Figure
-
P1dB-Compression-Point
-
Tags
CGHV145, CGHV14, CGHV1, CGHV, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***o-Tech
- 500W, 1200 - 1400MHz, GaN HEMT Flange Package
***i-Key
RF MOSFET HEMT 50V 440117
***hardson RFPD
RF POWER TRANSISTOR
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
Part # Mfg. Description Stock Price
CGHV14500F
DISTI # CGHV14500F-ND
WolfspeedRF MOSFET HEMT 50V 440117
RoHS: Compliant
Min Qty: 1
Container: Tray
66In Stock
  • 1:$520.0000
CGHV14500-TB
DISTI # CGHV14500-TB-ND
WolfspeedTEST FIXTURE FOR CGHV14500
RoHS: Compliant
Min Qty: 1
Container: Box
2In Stock
  • 1:$632.5000
CGHV14500F
DISTI # 941-CGHV14500F
Cree, Inc.RF JFET Transistors GaN HEMT 1.2-1.4GHz, 500 Watt
RoHS: Compliant
36
  • 1:$583.4200
CGHV14500-TB
DISTI # 941-CGHV14500F-TB
Cree, Inc.RF Development Tools Test Board without GaN HEMT
RoHS: Not compliant
2
  • 1:$617.0800
CGHV14500F
DISTI # CGHV14500F
WolfspeedRF POWER TRANSISTOR
RoHS: Compliant
0
  • 1:$629.4700
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Mfr.#: CGHV14250F-TB

OMO.#: OMO-CGHV14250F-TB

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Mfr.#: CGHV14250

OMO.#: OMO-CGHV14250-1190

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Mfr.#: CGHV1J006D-GP4

OMO.#: OMO-CGHV1J006D-GP4-WOLFSPEED

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Mfr.#: CGHV1J025

OMO.#: OMO-CGHV1J025-1190

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Mfr.#: CGHV1J025D-GP4

OMO.#: OMO-CGHV1J025D-GP4-WOLFSPEED

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Mfr.#: CGHV1J006D

OMO.#: OMO-CGHV1J006D-318

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Mfr.#: CGHV14250F

OMO.#: OMO-CGHV14250F-WOLFSPEED

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Availability
Stock:
Available
On Order:
3000
Enter Quantity:
Current price of CGHV14500F is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$780.00
$780.00
10
$741.00
$7 410.00
100
$702.00
$70 200.00
500
$663.00
$331 500.00
1000
$624.00
$624 000.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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