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CGHV14250F

CGHV14250F
Mfr. #:
CGHV14250F
Manufacturer:
N/A
Description:
RF JFET Transistors GaN HEMT 1.2-1.4GHz, 250 Watt
Lifecycle:
New from this manufacturer.
Datasheet:
CGHV14250F Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
CGHV14250F more Information
Product Attribute
Attribute Value
Manufacturer:
Cree, Inc.
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN
Gain:
18.6 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
150 V
Vgs - Gate-Source Breakdown Voltage:
- 10 V to 2 V
Id - Continuous Drain Current:
18 A
Output Power:
330 W
Maximum Drain Gate Voltage:
-
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 130 C
Pd - Power Dissipation:
-
Mounting Style:
Screw Mount
Package / Case:
440162
Packaging:
Tube
Application:
-
Configuration:
Single
Height:
3.78 mm
Length:
20.45 mm
Operating Frequency:
1.2 GHz to 1.4 GHz
Operating Temperature Range:
-
Product:
GaN HEMT
Width:
10.29 mm
Brand:
Wolfspeed / Cree
Forward Transconductance - Min:
-
Gate-Source Cutoff Voltage:
-
Class:
-
Development Kit:
CGHV14250F-TB
Fall Time:
-
NF - Noise Figure:
-
P1dB - Compression Point:
-
Product Type:
RF JFET Transistors
Rds On - Drain-Source Resistance:
-
Rise Time:
-
Factory Pack Quantity:
50
Subcategory:
Transistors
Typical Turn-Off Delay Time:
-
Vgs th - Gate-Source Threshold Voltage:
- 3 V
Tags
CGHV142, CGHV14, CGHV1, CGHV, CGH
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***o-Tech
- 250W, 1200 - 1400MHz, GaN HEMT Flange Package
***i-Key
RF MOSFET HEMT 50V 440162
***hardson RFPD
RF POWER TRANSISTOR
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
Part # Mfg. Description Stock Price
CGHV14250F
DISTI # CGHV14250F-ND		WolfspeedRF MOSFET HEMT 50V 440162
RoHS: Compliant
Min Qty: 1
Container: Tube		59In Stock
  • 1:$367.8300
CGHV14250F-TB
DISTI # CGHV14250F-TB-ND		WolfspeedTEST FIXTURE FOR CGHV14250
RoHS: Compliant
Min Qty: 1
Container: Box		5In Stock
  • 1:$550.0000
CGHV14250F
DISTI # 941-CGHV14250F		Cree, Inc.RF JFET Transistors GaN HEMT 1.2-1.4GHz, 250 Watt
RoHS: Compliant		1
  • 1:$367.8300
CGHV14250F-TB
DISTI # 941-CGHV14250F-TB		Cree, Inc.RF Development Tools Test Board without GaN HEMT
RoHS: Not compliant		2
  • 1:$550.0000
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Mfr.#: CGHV14500-TB

OMO.#: OMO-CGHV14500-TB

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Mfr.#: CGHV14500F/P

OMO.#: OMO-CGHV14500F-P-1190

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Mfr.#: CGHV14800F

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OMO.#: OMO-CGHV1F006S-AMP3-WOLFSPEED

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Mfr.#: CGHV1J025D-GP4

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Mfr.#: CGHV1J006D

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Mfr.#: CGHV1J070D

OMO.#: OMO-CGHV1J070D-318

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Availability
Stock:
Available
On Order:
1984
Enter Quantity:
Current price of CGHV14250F is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$347.93
$347.93
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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