PartNumber | CGHV14250F | CGHV14250F-TB |
Description | RF JFET Transistors GaN HEMT 1.2-1.4GHz, 250 Watt | RF Development Tools Test Board without GaN HEMT |
Manufacturer | Cree, Inc. | Cree, Inc. |
Product Category | RF JFET Transistors | RF Development Tools |
RoHS | Y | N |
Transistor Type | HEMT | - |
Technology | GaN | - |
Gain | 18.6 dB | - |
Transistor Polarity | N-Channel | - |
Vds Drain Source Breakdown Voltage | 150 V | - |
Vgs Gate Source Breakdown Voltage | - 10 V to 2 V | - |
Id Continuous Drain Current | 18 A | - |
Output Power | 330 W | - |
Maximum Drain Gate Voltage | - | - |
Minimum Operating Temperature | - 40 C | - 40 C |
Maximum Operating Temperature | + 130 C | + 130 C |
Pd Power Dissipation | - | - |
Mounting Style | Screw Mount | - |
Package / Case | 440162 | - |
Packaging | Tube | Bulk |
Application | - | - |
Configuration | Single | - |
Height | 3.78 mm | - |
Length | 20.45 mm | - |
Operating Frequency | 1.2 GHz to 1.4 GHz | - |
Operating Temperature Range | - | - |
Product | GaN HEMT | Demonstration Boards |
Width | 10.29 mm | - |
Brand | Wolfspeed / Cree | Wolfspeed / Cree |
Forward Transconductance Min | - | - |
Gate Source Cutoff Voltage | - | - |
Class | - | - |
Development Kit | CGHV14250F-TB | - |
Fall Time | - | - |
NF Noise Figure | - | - |
P1dB Compression Point | - | - |
Product Type | RF JFET Transistors | RF Development Tools |
Rds On Drain Source Resistance | - | - |
Rise Time | - | - |
Factory Pack Quantity | 50 | 2 |
Subcategory | Transistors | Development Tools |
Typical Turn Off Delay Time | - | - |
Vgs th Gate Source Threshold Voltage | - 3 V | - |
Type | - | RF Transistors |
Tool Is For Evaluation Of | - | CGHV14250F |
Frequency | - | 1.2 GHz to 1.4 GHz |
Operating Supply Voltage | - | - |
Description/Function | - | Demonstration board for CGHV14250F |
Dimensions | - | - |
Interface Type | - | - |
For Use With | - | CGHV14250F |