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SQD23N06-31L_GE3

SQD23N06-31L_GE3
Mfr. #:
SQD23N06-31L_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 60V 23A 100W AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Datasheet:
SQD23N06-31L_GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SQD23N06-31L_GE3 DatasheetSQD23N06-31L_GE3 Datasheet (P4-P6)SQD23N06-31L_GE3 Datasheet (P7-P9)SQD23N06-31L_GE3 Datasheet (P10-P11)
ECAD Model:
More Information:
SQD23N06-31L_GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
23 A
Rds On - Drain-Source Resistance:
24 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
24 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
37 W
Configuration:
Single
Channel Mode:
Enhancement
Qualification:
AEC-Q101
Tradename:
TrenchFET
Packaging:
Reel
Height:
2.38 mm
Length:
6.73 mm
Series:
SQ
Transistor Type:
1 N-Channel
Width:
6.22 mm
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
25 S
Fall Time:
3 ns
Product Type:
MOSFET
Rise Time:
8 ns
Factory Pack Quantity:
2000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
14 ns
Typical Turn-On Delay Time:
6 ns
Unit Weight:
0.050717 oz
Tags
SQD23N06-3, SQD23, SQD2, SQD
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
Part # Mfg. Description Stock Price
SQD23N06-31L-GE3
DISTI # V36:1790_09219196		Vishay IntertechnologiesN-CHANNEL 60V DPAK
RoHS: Compliant		0
    SQD23N06-31L_GE3
    DISTI # SQD23N06-31L_GE3TR-ND    		Vishay SiliconixMOSFET N-CH 60V 23A TO252
    RoHS: Compliant
    Min Qty: 2000
    Container: Tape & Reel (TR)    		2000In Stock
    • 6000:$0.6804
    • 2000:$0.7144
    SQD23N06-31L_GE3
    DISTI # SQD23N06-31L_GE3CT-ND    		Vishay SiliconixMOSFET N-CH 60V 23A TO252
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		2000In Stock
    • 1000:$0.7621
    • 500:$0.9198
    • 100:$1.1195
    • 10:$1.3930
    • 1:$1.5500
    SQD23N06-31L_GE3
    DISTI # SQD23N06-31L_GE3DKR-ND    		Vishay SiliconixMOSFET N-CH 60V 23A TO252
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		2000In Stock
    • 1000:$0.7621
    • 500:$0.9198
    • 100:$1.1195
    • 10:$1.3930
    • 1:$1.5500
    SQD23N06-31L_GE3
    DISTI # SQD23N06-31L-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 60V 23A 3-Pin(2+Tab) DPAK - Tape and Reel (Alt: SQD23N06-31L-GE3)
    RoHS: Not Compliant
    Min Qty: 2000
    Container: Reel    		Americas - 0
      SQD23N06-31L_GE3
      DISTI # SQD23N06-31L_GE3      		Vishay IntertechnologiesTrans MOSFET N-CH 60V 23A 3-Pin(2+Tab) DPAK - Tape and Reel (Alt: SQD23N06-31L_GE3)
      RoHS: Compliant
      Min Qty: 2000
      Container: Reel      		Americas - 0
      • 20000:$0.6229
      • 12000:$0.6399
      • 8000:$0.6579
      • 4000:$0.6859
      • 2000:$0.7069
      SQD23N06-31L_GE3
      DISTI # 781-SQD23N06-31L_GE3      		Vishay IntertechnologiesMOSFET 60V 23A 100W AEC-Q101 Qualified
      RoHS: Compliant      		3967
      • 1:$1.5500
      • 10:$1.3900
      • 100:$1.1100
      • 500:$0.9190
      • 1000:$0.7620
      • 2000:$0.7140
      • 4000:$0.6800
      • 10000:$0.6750
      SQD23N06-31L-GE3Vishay Intertechnologies 531
        SQD23N06-31L-GE3Vishay Intertechnologies*** FREE SHIPPING ORDERS OVER $100 ***1272
        • 318:$0.5460
        • 58:$0.6300
        • 1:$2.1000
        SQD23N0631LGE3Vishay IntertechnologiesPower Field-Effect Transistor, 23A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
        RoHS: Compliant        		2000
          SQD23N06-31L-GE3Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SQD23N06-31L_GE3
          RoHS: Compliant          		Americas -
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            Availability
            Stock:
            Available
            On Order:
            1986
            Enter Quantity:
            Current price of SQD23N06-31L_GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
            Reference price (USD)
            Quantity
            Unit Price
            Ext. Price
            1
            $1.55
            $1.55
            10
            $1.39
            $13.90
            100
            $1.11
            $111.00
            500
            $0.92
            $459.50
            1000
            $0.76
            $762.00
            Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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