2N5401G

Mfr. #:: 2N5401G
Manufacturer:: ON Semiconductor
Description:: Bipolar Transistors - BJT 500mA 160V PNP
Lifecycle:: New from this manufacturer.
Datasheet:: 2N5401G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: 2N5401G Datasheet 2N5401G Datasheet (P4-P5)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: Bipolar Transistors - BJT

RoHS:: Y

Mounting Style:: Through Hole

Package / Case:: TO-92-3

Transistor Polarity:: PNP

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 150 V

Collector- Base Voltage VCBO:: 160 V

Emitter- Base Voltage VEBO:: 5 V

Collector-Emitter Saturation Voltage:: 0.5 V

Maximum DC Collector Current:: 0.6 A

Gain Bandwidth Product fT:: 300 MHz

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Series:: 2N5401

Height:: 5.33 mm

Length:: 5.2 mm

Packaging:: Bulk

Width:: 4.19 mm

Brand:: ON Semiconductor

Continuous Collector Current:: 0.6 A

DC Collector/Base Gain hfe Min:: 50

Pd - Power Dissipation:: 625 mW

Product Type:: BJTs - Bipolar Transistors

Factory Pack Quantity:: 5000

Subcategory:: Transistors

Unit Weight:: 0.070548 oz

Tags: 2N5401G, 2N5401, 2N540, 2N54, 2N5

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2N5401G Description

***emi: High Current PNP Bipolar Transistor, TO-92 150 V, 0.1 A

***ied Electronics & Automation: Transistor, Bipolar,Si,PNP,Amplifier,VCEO 150VDC,IC 600mA,PD 1.5W,TO-92,hFE 50

***r Electronics: Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

***el Electronic: ON SEMICONDUCTOR - 2N5401G - TRANSISTOR, PNP, 150V, 0.6A, TO-92

***ponent Stockers: 600 mA 150 V PNP Si SMALL SIGNAL TRANSISTOR TO-92

***ark: Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:150V; Collector Emitter Saturation Voltage, Vce(sat):60V; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):60; Package/Case:TO-92 ;RoHS Compliant: Yes

***nell: TRANSISTOR, PNP, 150V, 0.6A, TO-92; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 150V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 625mW; DC Collector Current: 600mA; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 200mV; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 50; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C

Market price

Part #	Mfg.	Description	Stock	Price
2N5401G DISTI # 2N5401GOS-ND	ON Semiconductor	TRANS PNP 150V 0.6A TO-92 RoHS: Compliant Min Qty: 5000 Container: Bulk	Limited Supply - Call
2N5401G DISTI # 70099759	ON Semiconductor	SS T092 GP XSTR PNP 150V -LEAD FREE RoHS: Compliant	0	25:$0.1100
2N5401 DISTI # 863-2N5401	ON Semiconductor	Bipolar Transistors - BJT 500mA 160V PNP RoHS: Not compliant	0
2N5401G DISTI # 863-2N5401G	ON Semiconductor	Bipolar Transistors - BJT 500mA 160V PNP RoHS: Compliant	0
2N5401G	ON Semiconductor	RoHS: Not Compliant	13644	500:$0.0900 1000:$0.0900 25:$0.1000 100:$0.1000 1:$0.1100
2N5401G	ON Semiconductor	RoHS: Compliant	Europe - 539

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2N5401G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes