 |  | | |
| PartNumber | 2N5401G | 2N5401G-A | 2N5401G-A-AB3-R |
| Description | Bipolar Transistors - BJT 500mA 160V PNP | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-92-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 150 V | - | - |
| Collector Base Voltage VCBO | 160 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 0.5 V | - | - |
| Maximum DC Collector Current | 0.6 A | - | - |
| Gain Bandwidth Product fT | 300 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | 2N5401 | - | - |
| Height | 5.33 mm | - | - |
| Length | 5.2 mm | - | - |
| Packaging | Bulk | - | - |
| Width | 4.19 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 0.6 A | - | - |
| DC Collector/Base Gain hfe Min | 50 | - | - |
| Pd Power Dissipation | 625 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.070548 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor |
2N5401G | Bipolar Transistors - BJT 500mA 160V PNP | |
| 2N5401G | TRANS PNP 150V 0.6A TO-92 | ||
| 2N5401G-A | New and Original | ||
| 2N5401G-A-AB3-R | New and Original | ||
| 2N5401G-B | New and Original | ||
| 2N5401G-B-AB3-R | New and Original |