IPA60R330P6XKSA1

Mfr. #:: IPA60R330P6XKSA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 600V 7A TO220FP-3
Lifecycle:: New from this manufacturer.
Datasheet:: IPA60R330P6XKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220FP-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 12 A

Rds On - Drain-Source Resistance:: 297 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3.5 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 22 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 32 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: CoolMOS

Packaging:: Tube

Height:: 16.15 mm

Length:: 10.65 mm

Series:: CoolMOS P6

Transistor Type:: 1 N-Channel

Width:: 4.85 mm

Brand:: Infineon Technologies

Fall Time:: 7 ns

Product Type:: MOSFET

Rise Time:: 7 ns

Factory Pack Quantity:: 500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 33 ns

Typical Turn-On Delay Time:: 12 ns

Part # Aliases:: IPA60R330P6XKSA1 SP001017074

Unit Weight:: 0.211644 oz

Tags: IPA60R3, IPA60R, IPA60, IPA6, IPA

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
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IPA60R330P6XKSA1 Description

***ure Electronics: N-Channel 600 V 7 A 330 mO 22 nC CoolMOS P6 Power Transistor - TO-220FP

***ical: Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP Tube

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.8pF 50volts C0G +/-0.5pF

***ineon SCT: Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHS

***ark: MOSFET, N-CH, 600V, 12A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.297ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

***ure Electronics: Single N-Channel 600 V 280 mOhm 25.5 nC CoolMOS Power Mosfet - TO-220-3FP

***ical: Trans MOSFET N-CH 600V 13.8A 3-Pin(3+Tab) TO-220FP Tube

***ineon SCT: Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHS

***nell: MOSFET, N-CH, 600V, 13.8A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.8A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.252ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

***et Europe: Trans MOSFET N-CH 600V 13.8A 3-Pin(3+Tab) TO-220 Full-Pack

***ark: Mosfet, N-Ch, 600V, 13.8A, To-220Fp-3; Transistor Polarity:n Channel; Continuous Drain Current Id:13.8A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.25Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon SCT: CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS

***ineon: CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***emi: N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 15 A, 260 mΩ, TO-220F

*** Stop Electro: Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***el Electronic: FAIRCHILD SEMICONDUCTOR FCPF260N60E Power MOSFET, N Channel, 15 A, 600 V, 0.22 ohm, 10 V, 2.5 V

***Yang: Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220F - Rail/Tube

***ment14 APAC: MOSFET, N-CH, 600V, 15A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.22ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:36W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***icroelectronics: N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-220 package

***ical: Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220AB Tube

***ark: MOSFET, N-CH, 600V, 13A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:13A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 13A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***icroelectronics: N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-220FP package

***ure Electronics: N-Channel 600 V 280 mOhm Flange Mount MDmesh II Plus Mosfet - TO-220FP

***ical: Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220FP Tube

***enic: 600V 13A 280m´Î@10V6.5A 25W 4V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

***ark: MOSFET, N-CH, 600V, 13A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:13A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***ure Electronics: Single N-Channel 600 V 299 mOhm 22 nC CoolMOS Power Mosfet - TO-220-3-FP

***p One Stop Global: Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube

***ponent Stockers USA: 11 A 600 V 0.299 ohm N-CHANNEL Si POWER MOSFET TO-220AB

*** Stop Electro: Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power

***ark: MOSFET, N, TO-220; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:11A; On State Resistance:0.299ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220; ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:650V; On Resistance Rds(on):299mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:33W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:11A; Package / Case:TO-220; Power Dissipation Pd:33W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Market price

Part #	Mfg.	Description	Stock	Price
IPA60R330P6XKSA1 DISTI # IPA60R330P6XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 600V 12A TO220FP-3 RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
IPA60R330P6XKSA1 DISTI # 12AC9693	Infineon Technologies AG	MOSFET, N-CH, 600V, 12A, TO-220FP,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.297ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes	454	1:$1.8800 10:$1.6200 100:$1.3300 500:$1.1800
IPA60R330P6XKSA1	Infineon Technologies AG	Power Field-Effect Transistor RoHS: Compliant	12808	1000:$0.8700 500:$0.9100 100:$0.9500 25:$0.9900 1:$1.0700
IPA60R330P6XKSA1 DISTI # 726-IPA60R330P6XKSA1	Infineon Technologies AG	MOSFET N-Ch 600V 7A TO220FP-3 RoHS: Compliant	168	1:$1.8900 10:$1.6100 100:$1.2900 500:$1.1300 1000:$0.9310
IPA60R330P6XKSA1 DISTI # 1338578	Infineon Technologies AG	MOSFET COOLMOS P6 N-CH 600V 12A TO-220FP, TU	485	500:£0.6870 2500:£0.6460
IPA60R330P6XKSA1 DISTI # 2710006	Infineon Technologies AG	MOSFET, N-CH, 600V, 12A, TO-220FP RoHS: Compliant	454	1:$3.0900 10:$2.6900 100:$2.2000
IPA60R330P6XKSA1 DISTI # 2710006	Infineon Technologies AG	MOSFET, N-CH, 600V, 12A, TO-220FP RoHS: Compliant	455	5:£1.2600 25:£1.1500 100:£0.9260 250:£0.8640 500:£0.6870

Image	Part #	Description
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IPA60R330P6XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes