IPA60R460CEXKSA1

IPA60R460CEXKSA1
Mfr. #:
IPA60R460CEXKSA1
Manufacturer:
Infineon Technologies
Description:
Darlington Transistors MOSFET N-Ch 650V 9.1A TO220FP-3
Lifecycle:
New from this manufacturer.
Datasheet:
IPA60R460CEXKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
IPA60R460CEXKSA1 more Information
Product Attribute
Attribute Value
Manufacturer
Infineon Technologies
Product Category
Transistors - FETs, MOSFETs - Single
Packaging
Tube
Part-Aliases
IPA60R460CE SP001276042
Unit-Weight
0.081130 oz
Mounting-Style
Through Hole
Tradename
CoolMOS
Package-Case
TO-220-3
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
30 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 40 C
Fall-Time
10 ns
Rise-Time
9 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
9.1 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Vgs-th-Gate-Source-Threshold-Voltage
2.5 V
Rds-On-Drain-Source-Resistance
460 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
70 ns
Typical-Turn-On-Delay-Time
11 ns
Qg-Gate-Charge
28 nC
Channel-Mode
Enhancement
Tags
IPA60R46, IPA60R4, IPA60R, IPA60, IPA6, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 460 mOhm 28 nC CoolMOS™ Power Mosfet - TO-220-3FP
***ical
Trans MOSFET N-CH 600V 9.1A 3-Pin(3+Tab) TO-220FP Tube
***ark
Mosfet, N-Ch, 600V, 13.1A, To-220Fp-3; Transistor Polarity:n Channel; Continuous Drain Current Id:13.1A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.41Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
CoolMOS CE Power MOSFETs - 600-650V
Infineon 600V/650V CoolMOS™ CE N-Channel Power MOSFETs are a technology platform of Infineon's market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. These 600V/650V CoolMOS™ MOSFETs are cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still been price attractive. These devices target low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications.
Part # Mfg. Description Stock Price
IPA60R460CEXKSA1
DISTI # IPA60R460CEXKSA1-ND
Infineon Technologies AGMOSFET N-CH 600V TO-220-3
RoHS: Compliant
Min Qty: 1
Container: Tube
1000In Stock
  • 1000:$0.6219
  • 500:$0.7706
  • 100:$0.9751
  • 10:$1.2170
  • 1:$1.3600
IPA60R460CEXKSA1
DISTI # IPA60R460CEXKSA1
Infineon Technologies AGTrans MOSFET N-CH 650V 9.1A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPA60R460CEXKSA1)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 1000:$0.4869
  • 2000:$0.4689
  • 3000:$0.4519
  • 5000:$0.4369
  • 10000:$0.4289
IPA60R460CEXKSA1
DISTI # SP001276042
Infineon Technologies AGTrans MOSFET N-CH 650V 9.1A 3-Pin TO-220 Tube (Alt: SP001276042)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1:€0.7029
  • 10:€0.6249
  • 25:€0.5619
  • 50:€0.5109
  • 100:€0.4689
  • 500:€0.4319
  • 1000:€0.4019
IPA60R460CEXKSA1
DISTI # 13AC9014
Infineon Technologies AGMOSFET, N-CH, 600V, 13.1A, TO-220FP-3,Transistor Polarity:N Channel,Continuous Drain Current Id:13.1A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.41ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes137
  • 1:$1.0200
  • 10:$0.8680
  • 100:$0.6670
  • 500:$0.5900
IPA60R460CEXKSA1
DISTI # 726-IPA60R460CEXKSA1
Infineon Technologies AGMOSFET N-Ch 600V 9.1A TO220FP-3
RoHS: Compliant
1998
  • 1:$1.1100
  • 10:$0.9470
  • 100:$0.7270
  • 500:$0.6430
IPA60R460CEXKSA1
DISTI # 2726039
Infineon Technologies AGMOSFET, N-CH, 600V, 13.1A, TO-220FP-3
RoHS: Compliant
137
  • 1:$2.0600
  • 10:$1.8300
  • 100:$1.4500
IPA60R460CEXKSA1
DISTI # 2726039
Infineon Technologies AGMOSFET, N-CH, 600V, 13.1A, TO-220FP-3
RoHS: Compliant
139
  • 5:£0.8200
  • 25:£0.6500
  • 100:£0.5000
  • 250:£0.4740
  • 500:£0.4360
Image Part # Description
IPA60R460CEXKSA1

Mfr.#: IPA60R460CEXKSA1

OMO.#: OMO-IPA60R460CEXKSA1

MOSFET N-Ch 600V 9.1A TO220FP-3
IPA60R460CE

Mfr.#: IPA60R460CE

OMO.#: OMO-IPA60R460CE-1190

MOSFET, N-CH, 600V, 13.1A, TO-220FP-3
IPA60R460CEXKSA1 , 2SD18

Mfr.#: IPA60R460CEXKSA1 , 2SD18

OMO.#: OMO-IPA60R460CEXKSA1-2SD18-1190

New and Original
IPA60R460CEXKSA1

Mfr.#: IPA60R460CEXKSA1

OMO.#: OMO-IPA60R460CEXKSA1-INFINEON-TECHNOLOGIES

Darlington Transistors MOSFET N-Ch 650V 9.1A TO220FP-3
Availability
Stock:
Available
On Order:
3500
Enter Quantity:
Current price of IPA60R460CEXKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.59
$0.59
10
$0.56
$5.58
100
$0.53
$52.88
500
$0.50
$249.70
1000
$0.47
$470.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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