IPA60R46

IPA60R460CEXKSA1 vs IPA60R460CE vs IPA60R460CEXKSA1 , 2SD18

 
PartNumberIPA60R460CEXKSA1IPA60R460CEIPA60R460CEXKSA1 , 2SD18
DescriptionMOSFET N-Ch 600V 9.1A TO220FP-3MOSFET, N-CH, 600V, 13.1A, TO-220FP-3
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220FP-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current9.1 A--
Rds On Drain Source Resistance460 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge28 nC--
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation30 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameCoolMOSCoolMOS-
PackagingTubeTube-
Height16.15 mm--
Length10.65 mm--
SeriesCoolMOS CE--
Transistor Type1 N-Channel1 N-Channel-
Width4.85 mm--
BrandInfineon Technologies--
Fall Time10 ns10 ns-
Product TypeMOSFET--
Rise Time9 ns9 ns-
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time70 ns70 ns-
Typical Turn On Delay Time11 ns11 ns-
Part # AliasesIPA60R460CE SP001276042--
Unit Weight0.081130 oz0.081130 oz-
Part Aliases-IPA60R460CE SP001276042-
Package Case-TO-220-3-
Pd Power Dissipation-30 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-9.1 A-
Vds Drain Source Breakdown Voltage-600 V-
Vgs th Gate Source Threshold Voltage-2.5 V-
Rds On Drain Source Resistance-460 mOhms-
Qg Gate Charge-28 nC-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPA60R460CEXKSA1 MOSFET N-Ch 600V 9.1A TO220FP-3
IPA60R460CEXKSA1 Darlington Transistors MOSFET N-Ch 650V 9.1A TO220FP-3
IPA60R460CE MOSFET, N-CH, 600V, 13.1A, TO-220FP-3
IPA60R460CEXKSA1 , 2SD18 New and Original
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