IRLZ34NSPBF

IRLZ34NSPBF
Mfr. #:
IRLZ34NSPBF
Manufacturer:
Infineon / IR
Description:
MOSFET 55V 1 N-CH HEXFET 35mOhms 16.7nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRLZ34NSPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLZ34NSPBF DatasheetIRLZ34NSPBF Datasheet (P4-P6)IRLZ34NSPBF Datasheet (P7-P9)IRLZ34NSPBF Datasheet (P10-P11)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
55 V
Id - Continuous Drain Current:
30 A
Rds On - Drain-Source Resistance:
60 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
16 V
Qg - Gate Charge:
16.7 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
68 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
2.3 mm
Length:
6.5 mm
Transistor Type:
1 N-Channel
Type:
HEXFET Power MOSFET
Width:
6.22 mm
Brand:
Infineon / IR
Forward Transconductance - Min:
11 S
Fall Time:
29 ns
Product Type:
MOSFET
Rise Time:
100 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
21 ns
Typical Turn-On Delay Time:
8.9 ns
Part # Aliases:
SP001568692
Unit Weight:
0.139332 oz
Tags
IRLZ34NS, IRLZ34N, IRLZ3, IRLZ, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.035Ohm;ID 30A;D2Pak;PD 68W;VGS +/-16V;-55d
***ineon SCT
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Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
***ment14 APAC
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.8W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:110mJ; Capacitance Ciss Typ:880pF; Current Id Max:30A; Package / Case:D2-PAK; Power Dissipation Pd:3.8W; Power Dissipation Pd:3.8W; Pulse Current Idm:110A; Reverse Recovery Time trr Typ:76ns; SMD Marking:Z34NS; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V
***emi
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***r Electronics
Power Field-Effect Transistor, 26A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
***et
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*** Electronic Components
MOSFET 20a 55V N-Channel UltraFET
***i-Key
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***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 35A I(D), 55V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ser
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***Yang
27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs - Bulk
***ponent Stockers USA
29 A 60 V 0.04 ohm N-CHANNEL Si POWER MOSFET TO-263AB
***ser
Not available to order 20a, 60V, 0.043 Ohm Logic Level N-Ch
***ure Electronics
IRLZ34S Series N-Channel 60 V 50 mOhm 3.7 W Power Mosfet - D2PAK (TO-263)
***ical
Trans MOSFET N-CH Si 60V 30A 3-Pin(2+Tab) D2PAK
*** Services
CoC and 2-years warranty / RFQ for pricing
Part # Mfg. Description Stock Price
IRLZ34NSPBF
DISTI # IRLZ34NSPBF-ND
Infineon Technologies AGMOSFET N-CH 55V 30A D2PAK
RoHS: Compliant
Min Qty: 850
Container: Tube
Limited Supply - Call
    IRLZ34NSPBF
    DISTI # IRLZ34NSPBF
    Infineon Technologies AGTrans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK - Rail/Tube (Alt: IRLZ34NSPBF)
    RoHS: Compliant
    Min Qty: 850
    Container: Tube
    Americas - 650
      IRLZ34NSPBF
      DISTI # 942-IRLZ34NSPBF
      Infineon Technologies AGMOSFET 55V 1 N-CH HEXFET 35mOhms 16.7nC
      RoHS: Compliant
      0
        IRLZ34NSPBFInternational RectifierPower Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
        RoHS: Compliant
        2867
        • 1000:$0.5400
        • 500:$0.5700
        • 100:$0.5900
        • 25:$0.6200
        • 1:$0.6600
        IRLZ34NSPBF
        DISTI # 5430614P
        Infineon Technologies AGMOSFET N-CHANNEL 55V 30A D2PAK, TU16
        • 25:£0.8100
        • 100:£0.7000
        • 250:£0.6700
        • 500:£0.6600
        IRLZ34NSPBF
        DISTI # 5430614
        Infineon Technologies AGMOSFET N-CHANNEL 55V 30A D2PAK, EA36
        • 1:£2.0000
        • 25:£0.8100
        • 100:£0.7000
        • 250:£0.6700
        • 500:£0.6600
        IRLZ34NSPBF
        DISTI # 1013483
        Infineon Technologies AGMOSFET, N, D2-PAK
        RoHS: Compliant
        0
        • 1:$2.4100
        • 10:$2.0600
        • 100:$1.6400
        • 500:$1.4400
        • 1000:$1.2000
        • 2500:$1.1300
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        OMO.#: OMO-IRLZ34N-1190

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        Mfr.#: IRLZ34NPBF

        OMO.#: OMO-IRLZ34NPBF-INFINEON-TECHNOLOGIES

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        IRLZ34NSTRRPBF

        Mfr.#: IRLZ34NSTRRPBF

        OMO.#: OMO-IRLZ34NSTRRPBF-1190

        New and Original
        IRLZ34NSTRR

        Mfr.#: IRLZ34NSTRR

        OMO.#: OMO-IRLZ34NSTRR-INFINEON-TECHNOLOGIES

        MOSFET N-CH 55V 30A D2PAK
        IRLZ34NSPBF

        Mfr.#: IRLZ34NSPBF

        OMO.#: OMO-IRLZ34NSPBF-INFINEON-TECHNOLOGIES

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        IRLZ34NLPBF

        Mfr.#: IRLZ34NLPBF

        OMO.#: OMO-IRLZ34NLPBF-INFINEON-TECHNOLOGIES

        IGBT Transistors MOSFET MOSFT 55V 30A 35mOhm 16.7nC LogLvl
        Availability
        Stock:
        Available
        On Order:
        5000
        Enter Quantity:
        Current price of IRLZ34NSPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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