FDS8947A

Mfr. #:: FDS8947A
Manufacturer:: ON Semiconductor
Description:: MOSFET 2P-CH 30V 4A 8SOIC
Lifecycle:: New from this manufacturer.
Datasheet:: FDS8947A Datasheet
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HTML Datasheet:: FDS8947A Datasheet FDS8947A Datasheet (P4-P5)
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Product Attribute
Attribute Value

Manufacturer: Fairchild Semiconductor

Product Category: FETs - Arrays

Series: -

Packaging: Tape & Reel (TR)

Package-Case: 8-SOIC (0.154", 3.90mm Width)

Operating-Temperature: -55°C ~ 150°C (TJ)

Mounting-Type: Surface Mount

Supplier-Device-Package: 8-SO

FET-Type: 2 P-Channel (Dual)

Power-Max: 900mW

Drain-to-Source-Voltage-Vdss: 30V

Input-Capacitance-Ciss-Vds: 730pF @ 15V

FET-Feature: Logic Level Gate

Current-Continuous-Drain-Id-25°C: 4A

Rds-On-Max-Id-Vgs: 52 mOhm @ 4A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Gate-Charge-Qg-Vgs: 27nC @ 10V

Tags: FDS8947, FDS894, FDS89, FDS8, FDS

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FDS8947A Description

***inecomponents.com: Dual P-Channel Enhancement Mode Field Effect Transistor

***i-Key: MOSFET 2P-CH 30V 4A 8SOIC

***Yang: 30V DUAL P-CH. FET, 52 MO, SO8 - Bulk

***or: P-CHANNEL POWER MOSFET

***ser: MOSFETs SO-8 DUAL P-CH -30V

***(Formerly Allied Electronics): IRF7303PBF Dual N-channel MOSFET Transistor; 4.9 A; 30 V; 8-Pin SOIC

***ure Electronics: Dual N-Channel 30 V 0.08 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC Tube

***klin Elektronik: INFINEON SMD MOSFET NFET 30V 4,9A 0,05Ω 150°C SO-8 IRF7303TRPBF

***fin: Transistor NPN Mos IRF7303/IRF7303PBF INTERNATIONAL RECTIFIER RoHS V=30 SO8

***roFlash: Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, DUAL, NN, LOGIC, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 4.9A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Po

***ark: Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:4.9A; Continuous Drain Current Id P Channel:-; No. of Pins:8Pins; Product Range:- RoHS Compliant: Yes

***ical: Trans MOSFET N-CH 30V 5A 8-Pin SOIC T/R

***S: French Electronic Distributor since 1988

***inecomponents.com: RECOMMEND REPLACEMENT PART: FDS6930A

***rchild Semiconductor: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC/DC conversion, disk drive motor control, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

***el Electronic: Res Thick Film 0603 20K Ohm 1% 0.1W(1/10W) ±100ppm/C Pad SMD Automotive T/R

***et: TRANS MOSFET N-CH 30V 5A 8SOIC

***DA Technology Co., Ltd.: Product Description Demo for Development.

***rchild Semiconductor: These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***et: Transistor MOSFET Array Dual P-Channel 30V 4.9A 8-Pin SOIC

***ure Electronics: Dual P-Channel 30 V 0.058 Ohm 23 nC HEXFET® Power Mosfet - SOIC-8

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ark: Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.9A; On Resistance Rds(On):0.042Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Product Range:-Rohs Compliant: Yes

***ical: Trans MOSFET P-CH 30V 5A 8-Pin SOIC T/R

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Package/Case:8-SOIC; Drain-Source Breakdown Voltage:-30V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:-5A ;RoHS Compliant: Yes

***rchild Semiconductor: This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 25V).

***nell: MOSFET, DUAL, P, SMD, 8-SOIC; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -5A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.055ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.7V; Power Dissipation Pd: 1.6W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Drain Current Id, P Channel: -5A; Current Id Max: -5A; Drain Source Voltage Vds, P Channel: -30V; Module Configuration: Dual; On Resistance Rds(on), P Channel: 0.046ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -30V; Voltage Vgs Max: -1.7V; Voltage Vgs Rds on Measurement: -10V

Market price

Part #	Mfg.	Description	Stock	Price
FDS8947A DISTI # FDS8947A-ND	ON Semiconductor	MOSFET 2P-CH 30V 4A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
FDS8947A	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	1954	1000:$1.9000 500:$1.9900 100:$2.0800 25:$2.1700 1:$2.3300
FDS8947A DISTI # 512-FDS8947A	ON Semiconductor	MOSFET SO-8 DUAL P-CH -30V RoHS: Compliant	0
FDS8947A	Fairchild Semiconductor Corporation	4 A, 30 V, 0.052 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET	131	84:$2.0800 9:$2.4000 1:$4.8000

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FDS8947A

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes