FDS8947A Datasheet FDS8947A | P1-P3

March 1998

FDS8947A

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description Features

Absolute Maximum Ratings T

A

= 25

o

C unless other wise noted

Symbol Parameter FDS8947A Units

V

DSS

Drain-Source Voltage -30 V

V

GSS

Gate-Source Voltage -20 V

I

D

Drain Current - Continuous (Note 1a) - 4.0 A

- Pulsed -20

P

D

Power Dissipation for Dual Operation 2 W

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b) 1

(Note 1c) 0.9

T

J

,T

STG

Operating and Storage Temperature Range -55 to 150 °C

THERMAL CHARACTERISTICS

R

θ

JA

Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W

R

θ

JC

Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

FDS8947A Rev.B

-4.0 A, -30 V. R

DS(ON)

= 0.052Ω @ V

GS

= -10 V

R

DS(ON)

= 0.080Ω @ V

GS

= -4.5 V.

High density cell design for extremely low R

DS(ON)

.

High power and current handling capability in a widely

used surface mount package.

Dual MOSFET in surface mount package.

SOT-23

SuperSOT

TM

-8

SOIC-16

SO-8 SOT-223

SuperSOT

TM

-6

SO-8 P-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance and provide

superior switching performance. These devices are particularly

suited for low voltage applications such as notebook computer

power management and other battery powered circuits where

fast switching, low in-line power loss, and resistance to

transients are needed.

S1

D1

S2

G1

SO-8

D2

D1

G2

FDS

8947A

1

5

7

8

2

3

4

6

Electrical Characteristics (T

A

= 25

O

C unless otherwise noted )

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BV

DSS

Drain-Source Breakdown Voltage V

GS

= 0 V, I

D

= -250 µA -30 V

∆BV

DSS

/∆T

J

Breakdown Voltage Temp. Coefficient

I

D

= -250 µA, Referenced to 25

o

C

-23

mV /

o

C

I

DSS

Zero Gate Voltage Drain Current

V

DS

= -24 V, V

GS

= 0 V

-1 µA

I

GSSF

Gate - Body Leakage, Forward V

GS

= 20 V, V

DS

= 0 V -100 nA

I

GSSR

Gate - Body Leakage, Reverse

V

GS

= -20 V, V

DS

= 0 V

-100 nA

ON CHARACTERISTICS (Note 2)

V

GS(th)

Gate Threshold Voltage V

DS

= V

GS

, I

D

= -250 µA -1 -1.5 -3 V

∆V

GS(th)

/∆T

J

Gate Threshold Voltage Temp. Coefficient

I

D

= -250 µA, Referenced to 25

o

C

4

mV /

o

C

R

DS(ON)

Static Drain-Source On-Resistance

V

GS

= -10 V, I

D

= -4 A

0.044 0.052

Ω

T

J

=125°C 0.06 0.085

V

GS

= -4.5 V, I

D

= -3.2 A

0.067 0.08

I

D(ON)

On-State Drain Current V

GS

= -10 V, V

DS

= -5 V -20 A

g

FS

Forward Transconductance

V

DS

= -10 V, I

D

= -4 A

8 S

DYNAMIC CH ARACTERISTICS

C

iss

Input Capacitance V

DS

= -15 V, V

GS

= 0 V,

f = 1.0 MHz

730 pF

C

oss

Output Capacitance 400 pF

C

rss

Reverse Transfer Capacitance 90 pF

SWITCHING CHARACTERISTICS (Note 2)

t

D(on)

Turn - On Delay Time

V

DS

= -10 V, I

D

= -1 A

11 20 ns

t

r

Turn - On Rise Time

V

GS

= -10 V , R

GEN

= 6 Ω

10 18

t

D(off)

Turn - Off Delay Time 90 110

t

f

Turn - Off Fall Time 55 80

Q

g

Total Gate Charge

V

DS

= -10 V, I

D

= -4 A,

19 27 nC

Q

gs

Gate-Source Charge

V

GS

= -10 V

3.5

Q

gd

Gate-Drain Charge 3.6

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

Maximum Continuous Drain-Source Diode Forward Current -1.3 A

V

SD

Drain-Source Diode Forward Voltage

V

GS

= 0 V, I

S

= -1.3 A

(Note 2)

-0.75 -1.2 V

t

rr

Reverse Recovery Time V

GS

= 0 V, I

F

= -1.3 A

dI

F

/dt = 100 A/µs

48 100 ns

Irr Reverse Recovery Current 0.8 A

Notes:

1. R

θ

JA

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

θ

JC

is guaranteed by

design while R

θ

CA

is determined by the user's board design.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

FDS8947A Rev.B

c. 135

O

C/W on a 0.003 in

2

pad of 2oz copper.

b. 125

O

C/W on a 0.02 in

2

pad of 2oz copper.

a. 78

O

C/W on a 0.5 in

2

pad of 2oz copper.

FDS8947A Rev.B

0 4 8 12 16 20

0.5

1

1.5

2

2.5

3

-I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

V =-3.5V

GS

D

R , NORMALIZED

DS(on)

-5.0V

-4.5V

-4.0V

-10V

-6.0V

Typical Electrical Characteristics

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate

Voltage.

-50 -25 0 25 50 75 100 125 150

0.6

0.8

1

1.2

1.4

1.6

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

J

R , NORMALIZED

DS(ON)

V = -10V

GS

I = -4.0A

D

Figure 3. On-Resistance Variation with

Temperature.

1 2 3 4 5 6

0

5

10

15

20

-V , GATE TO SOURCE VOLTAGE (V)

-I , DRAIN CURRENT (A)

V = -5V

DS

GS

D

T = -55°C

J

125°C

25°C

Figure 5. Transfer Characteristics.

0 0.3 0.6 0.9 1.2 1.5

0.0001

0.001

0.01

0.1

1

5

20

-V , BODY DIODE FORWARD VOLTAGE (V)

-I , REVERSE DRAIN CURRENT (A)

25°C

-55°C

V = 0V

GS

SD

S

T = 125°C

J

Figure 6 . Body Diode Forward Voltage

Variation with Source Current

and Temperature.

2 4 6 8 10

0

0.05

0.1

0.15

0.2

0.25

0.3

-V , GATE TO SOURCE VOLTAGE (V)

GS

R , ON-RESISTANCE (OHM)

DS(ON)

T = 25°C

A

I = -2A

D

T = 125°C

A

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

0 1 2 3 4 5

0

5

10

15

20

-V , DRAIN-SOURCE VOLTAGE (V)

-I , DRAIN-SOURCE CURRENT (A)

V =-10V

GS

DS

D

-4.0V

-4.5V

-3.5V

-3.0V

-6.0V

-5.0V

FDS8947A

FDS8947A

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