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FGA120N30DTU

FGA120N30DTU
Mfr. #:
FGA120N30DTU
Manufacturer:
ON Semiconductor
Description:
IGBT 300V 120A 290W TO3P
Lifecycle:
New from this manufacturer.
Datasheet:
FGA120N30DTU Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
FGA12, FGA1, FGA
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IGBT 300V 120A 290W TO3P
***ark
IGBT, PDP, 300V, TO-3P; Transistor type:IGBT; Voltage, Vces:300V; Current, Ic continuous a max:120A; Voltage, Vce sat max:1.4V; Power dissipation:290W; Package/Case:TO-3P; Current, Ic @ Vce sat:25A; Current, Icm pulsed:300A; Pin RoHS Compliant: Yes
***nell
IGBT, PDP, 300V, TO-3P; DC Collector Current: 120A; Collector Emitter Saturation Voltage Vce(on): 1.4V; Power Dissipation Pd: 290W; Collector Emitter Voltage V(br)ceo: 300V; Transistor Case Style: TO-3P; No. of Pins: 3Pins; Operating Temperature Max: 150°C; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Ic @ Vce Sat: 25A; Current Ic Continuous a Max: 120A; Current Temperature: 25°C; Fall Time tf: 130ns; Full Power Rating Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; Junction to Case Thermal Resistance A: 0.43°C/W; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pin Configuration: With flywheel diode; Power Dissipation Max: 290W; Pulsed Current Icm: 300A; Rise Time: 270ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 300V
Part # Mfg. Description Stock Price
FGA120N30DTU
DISTI # FGA120N30DTU-ND		ON SemiconductorIGBT 300V 120A 290W TO3P
RoHS: Compliant
Min Qty: 450
Container: Tube		Limited Supply - Call
    FGA120N30DTU
    DISTI # 512-FGA120N30DTU    		ON SemiconductorIGBT Transistors 300V PDP IGBT
    RoHS: Compliant    		0
      FGA120N30DTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 120A I(C), 300V V(BR)CES, N-Channel
      RoHS: Compliant      		364
      • 1000:$1.3800
      • 500:$1.4500
      • 100:$1.5100
      • 25:$1.5800
      • 1:$1.7000
      Image Part # Description
      FGA120N30D

      Mfr.#: FGA120N30D

      OMO.#: OMO-FGA120N30D-1190

      		 New and Original
      FGA120N30DTU

      Mfr.#: FGA120N30DTU

      OMO.#: OMO-FGA120N30DTU-ON-SEMICONDUCTOR

      		 IGBT 300V 120A 290W TO3P
      FGA120N33D

      Mfr.#: FGA120N33D

      OMO.#: OMO-FGA120N33D-1190

      		 New and Original
      Availability
      Stock:
      Available
      On Order:
      1000
      Enter Quantity:
      Current price of FGA120N30DTU is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $2.07
      $2.07
      10
      $1.97
      $19.66
      100
      $1.86
      $186.30
      500
      $1.76
      $879.75
      1000
      $1.66
      $1 656.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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