SI4116DY-T1-GE3

Mfr. #:: SI4116DY-T1-GE3
Manufacturer:: Vishay
Description:: MOSFET N-CH 25V 18A 8-SOIC
Lifecycle:: New from this manufacturer.
Datasheet:: SI4116DY-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: SI4116DY-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer: VISHAY

Product Category: FETs - Single

Packaging: Reel

Part-Aliases: SI4466DY-T1-E3-S

Unit-Weight: 0.006596 oz

Mounting-Style: SMD/SMT

Package-Case: SOIC-Narrow-8

Technology: Si

Number-of-Channels: 1 Channel

Configuration: Single

Transistor-Type: 1 N-Channel

Pd-Power-Dissipation: 2.5 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 15 ns

Rise-Time: 11 ns

Vgs-Gate-Source-Voltage: 12 V

Id-Continuous-Drain-Current: 12.7 A

Vds-Drain-Source-Breakdown-Voltage: 25 V

Rds-On-Drain-Source-Resistance: 8.6 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 50 ns

Typical-Turn-On-Delay-Time: 13 ns

Channel-Mode: Enhancement

Tags: SI4116DY-T, SI4116, SI411, SI41, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4116DY-T1-GE3 Description

***ure Electronics: N-Channel 25 V 0.0086 Ohm 5 W Surface Mount Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH 25V 18A 8-Pin SOIC N T/R / MOSFET N-CH 25V 18A 8-SOIC

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:18000mA; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0115ohm; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.4V; Power Dissipation, Pd:2.5W ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N CH, 25V, 18A, 8SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:18A; Power Dissipation Pd:5W; Voltage Vgs Max:12V

SI4116DY-T1-GE3 More Information

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
SI4116DY-T1-GE3 DISTI # V72:2272_09216447	Vishay Intertechnologies	Trans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R RoHS: Compliant	1222	1000:$0.5113 500:$0.6052 250:$0.6959 100:$0.6979 25:$0.8497 10:$0.8532 1:$0.9820
SI4116DY-T1-GE3 DISTI # SI4116DY-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 25V 18A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8881In Stock	1000:$0.5420 500:$0.6865 100:$0.8852 10:$1.1200 1:$1.2600
SI4116DY-T1-GE3 DISTI # SI4116DY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 25V 18A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	8881In Stock	1000:$0.5420 500:$0.6865 100:$0.8852 10:$1.1200 1:$1.2600
SI4116DY-T1-GE3 DISTI # SI4116DY-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 25V 18A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	7500In Stock	2500:$0.4911
SI4116DY-T1-GE3 DISTI # 29064963	Vishay Intertechnologies	Trans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R RoHS: Compliant	1222	1000:$0.5113 500:$0.6052 250:$0.6959 100:$0.6979 25:$0.8497 14:$0.8532
SI4116DY-T1-GE3 DISTI # SI4116DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R (Alt: SI4116DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.8429 5000:€0.6039 10000:€0.4899 15000:€0.4329 25000:€0.4149
SI4116DY-T1-GE3 DISTI # SI4116DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4116DY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5429 5000:$0.5269 10000:$0.5049 15000:$0.4909 25000:$0.4779
SI4116DY-T1-GE3 DISTI # 16P3725	Vishay Intertechnologies	Trans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 16P3725) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.8220
SI4116DY-T1-GE3 DISTI # 16P3725	Vishay Intertechnologies	N CHANNEL MOSFET, 25V, 18A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:25V,On Resistance Rds(on):11.5mohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:1.4V,Product Range:-, RoHS Compliant: Yes	78	1:$1.5100 10:$1.2500 25:$1.1500 50:$1.0500 100:$0.9550 250:$0.8890 500:$0.8220
SI4116DY-T1-GE3 DISTI # R1082526	Vishay Dale	TRANSITOR,SI4804BDY RoHS: Compliant	0	5:$1.2800 25:$1.0600 100:$0.9700 250:$0.8900 500:$0.8300
SI4116DY-T1-GE3 DISTI # 781-SI4116DY-T1-GE3	Vishay Intertechnologies	MOSFET 25V Vds 12V Vgs SO-8 RoHS: Compliant	2103	1:$1.2600 10:$1.0400 100:$0.7960 500:$0.6850 1000:$0.6010 2500:$0.6000
SI4116DY-T1-GE3 DISTI # 7103317P	Vishay Intertechnologies	MOSFET N-CHANNEL 25V 12.7A SOIC8, RL	2600	50:£0.6260
SI4116DY-T1-GE3 DISTI # 7103317	Vishay Intertechnologies	MOSFET N-CHANNEL 25V 12.7A SOIC8, PK	725	5:£0.9720 50:£0.6260
SI4116DYT1GE3	Vishay Intertechnologies	RoHS: Compliant	Europe - 10000
SI4116DY-T1-GE3	Vishay Intertechnologies	MOSFET 25V Vds 12V Vgs SO-8 RoHS: Compliant	Americas -	2500:$0.4820 10000:$0.4410
SI4116DY-T1-GE3 DISTI # 1794777	Vishay Intertechnologies	MOSFET, N CH, 25V, 18A, 8SOIC RoHS: Compliant	0	5:£1.0800 25:£0.6960 100:£0.6720 250:£0.6470 500:£0.6230
SI4116DY-T1-GE3 DISTI # C1S803601003591	Vishay Intertechnologies	Trans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R RoHS: Compliant	1222	250:$0.6961 100:$0.6981 25:$0.8498 10:$0.8533

Image	Part #	Description
	Mfr.#: SI4116DY-T1-GE3 OMO.#: OMO-SI4116DY-T1-GE3	MOSFET 25V Vds 12V Vgs SO-8
	Mfr.#: SI4116DY-T1-E3 OMO.#: OMO-SI4116DY-T1-E3	MOSFET 25V Vds 12V Vgs SO-8
	Mfr.#: SI4116DY-T1-E3 OMO.#: OMO-SI4116DY-T1-E3-VISHAY	IGBT Transistors MOSFET 25V 18A 5.0W 8.6mohm @ 10V
	Mfr.#: SI4116DY OMO.#: OMO-SI4116DY-1190	New and Original
	Mfr.#: SI4116DY-T1 OMO.#: OMO-SI4116DY-T1-1190	New and Original
	Mfr.#: SI4116DY-T1-GE3 OMO.#: OMO-SI4116DY-T1-GE3-VISHAY	MOSFET N-CH 25V 18A 8-SOIC
	Mfr.#: SI4116DYT1GE3 OMO.#: OMO-SI4116DYT1GE3-1190	Small Signal Field-Effect Transistor, 12.7A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SI4116DY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes