SFT1407-TL-E

Mfr. #:: SFT1407-TL-E
Manufacturer:: Rochester Electronics, LLC
Description:: Other semiconductors
Lifecycle:: New from this manufacturer.
Datasheet:: SFT1407-TL-E Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Tags: SFT1407, SFT140, SFT14, SFT1, SFT

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SFT1407-TL-E Description

***(Formerly Allied Electronics): MOSFET, N-CH, 45V, 14A, 21MOHM@10A, TP-FA

***r Electronics: Small Signal Field-Effect Transistor, 14A I(D), 45V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***nell: MOSFET, N CH 45V 14A TO251; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:45V; Cont Current Id:14A; On State Resistance:0.028ohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:2.6V; Case Style:TP; Termination Type:Through Hole; Power Dissipation:1W; Transistor Case Style:TP

***el Electronic: TRANSISTOR,MOSFET,P-CHANNEL,45V V(BR)DSS,10A I(D),TO-252VAR

***ical: Trans MOSFET P-CH Si 45V 10A 3-Pin(2+Tab) TP-FA

***nell: MOSFET, P CH, 45V, 10A, TO-251; Transistor Polarity:P-Channel; Current Id Max:-10A; Drain Source Voltage Vds:-45V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:-10V; Voltage Vgs Max:20V; Power Dissipation:15W; Transistor Case Style:TO-251; No. of Pins:3

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.07Ohm;ID 17A;TO-220AB;PD 45W;VGS +/-20V

***eco: Transistor MOSFET N Channel 55 Volt 17 Amp 3 Pin 3+ Tab TO-220 AB

*** Source Electronics: MOSFET N-CH 55V 17A TO-220AB / Trans MOSFET N-CH Si 55V 17A 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: Single N-Channel 55 V 0.07 Ohm 20 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***id Electronics: Transistor MOSFET N-Ch. 17A/55V TO220 IRFZ 24 NPBF

***roFlash: Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

***ment14 APAC: MOSFET, N, 55V, 17A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:55V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:45W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:17A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.3°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:45W; Power Dissipation Pd:45W; Pulse Current Idm:68A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

*** Source Electronics: MOSFET N-CH 55V 18A TO-220AB / Trans MOSFET N-CH Si 55V 18A 3-Pin(3+Tab) TO-220AB Tube

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***ure Electronics: Single N-Channel 55 V 0.105 Ohm 15 nC HEXFET® Power Mosfet - TO-220-3

***id Electronics: Transistor MOSFET N-Ch. 18A/55V TO220 IRLZ 24 NPBF

***eco: 55V SINGLE N-CHANNEL HEXFETPOWER MOSFET IN A HEXDIP PA

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):60mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 18 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 60 / Gate-Source Voltage V = 16 / Fall Time ns = 29 / Rise Time ns = 74 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 7.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 45

***ment14 APAC: MOSFET, N, 55V, 18A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:55V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:45W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:18A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.3°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:45W; Power Dissipation Pd:45W; Pulse Current Idm:72A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.065Ohm;ID 17A;I-Pak (TO-251AA);PD 45W

***ure Electronics: Single N-Channel 55 V 0.065 Ohm 15 nC HEXFET® Power Mosfet - TO-251AA

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

***id Electronics: Transistor MOSFET N-Ch. 60V 14A TO251 IRLU 024 NPBF

*** Stop Electro: Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

***ment14 APAC: MOSFET, N, 55V, 17A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:55V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:46W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:17A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.3°C/W; No. of Transistors:1; On State resistance @ Vgs = 10V:65mohm; Package / Case:IPAK; Power Dissipation Pd:46W; Power Dissipation Pd:46W; Pulse Current Idm:72A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

***emi: N-Channel PowerTrench® MOSFET 40 V, 25 A, 7.8 mΩ

***ical: Trans MOSFET N-CH 40V 25A Automotive 3-Pin(2+Tab) DPAK T/R

***r Electronics: Power Field-Effect Transistor, 40V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

*** Electronic Components: MOSFET 40V 15A DPAK N-Chnl PowerTrench

***ark: 40V, 25A, 6.2M , DpakN-Channel Powertrench / Reel

***et Europe: Trans MOSFET N-CH 40V 16A 8-Pin PowerPAK 1212 T/R

***enic: 40V 16A 9m´Î@10V16.4A 62W 2.5V@250Ã×A N Channel PowerPAK 1212-8 MOSFETs ROHS

***-Wing Technology: Automotive N-Channel 40 V (D-S) 175 °C MOSFET

***ment14 APAC: MOSFET, N-CH, 40V, 16A, PPAK1212-8

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 16A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ure Electronics: MOSFET 40V 16A 62W AEC-Q101 Qualified

***nell: MOSFET, N-CH, 40V, 16A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:62W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited

Market price

Part #	Mfg.	Description	Stock	Price
SFT1407-TL-E DISTI # C1S722000129230	ON Semiconductor	Other semiconductors	3	10:$0.4480
SFT1407-TL-E	ON Semiconductor	RoHS: Not Compliant	700	1000:$1.0600 500:$1.1200 100:$1.1600 25:$1.2100 1:$1.3000
SFT1407-TL-E	SANYO Semiconductor Co Ltd	RoHS: Not Compliant	671	1000:$0.4400 500:$0.4600 100:$0.4800 25:$0.5000 1:$0.5400

Related products

Image	Part #	Description
	Mfr.#: SFT1402-TL-E OMO.#: OMO-SFT1402-TL-E-1190	- Bulk (Alt: SFT1402-TL-E)
	Mfr.#: SFT1403-E OMO.#: OMO-SFT1403-E-1190	New and Original
	Mfr.#: SFT1405 OMO.#: OMO-SFT1405-1190	New and Original
	Mfr.#: SFT1405-TL-E OMO.#: OMO-SFT1405-TL-E-1190	- Bulk (Alt: SFT1405-TL-E)
	Mfr.#: SFT1405TL-E OMO.#: OMO-SFT1405TL-E-1190	New and Original
	Mfr.#: SFT1405TLE OMO.#: OMO-SFT1405TLE-1190	New and Original
	Mfr.#: SFT1407 OMO.#: OMO-SFT1407-1190	New and Original
	Mfr.#: SFT1407-S-TL-E OMO.#: OMO-SFT1407-S-TL-E-1190	New and Original
	Mfr.#: SFT1407-TL-E OMO.#: OMO-SFT1407-TL-E-1190	Other semiconductors
	Mfr.#: SFT1407TL-E OMO.#: OMO-SFT1407TL-E-1190	New and Original

Availability

Stock:: Available
On Order:: 1000
Enter Quantity:

Current price of SFT1407-TL-E is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.60~~; ~~$0.60~~

10: ~~$0.57~~; ~~$5.70~~

100: ~~$0.54~~; ~~$54.00~~

500: ~~$0.51~~; ~~$255.00~~

1000: ~~$0.48~~; ~~$480.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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SFT1407-TL-E

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes