DMT6016LPS-13

Mfr. #:: DMT6016LPS-13
Manufacturer:: Diodes Incorporated
Description:: Darlington Transistors MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A
Lifecycle:: New from this manufacturer.
Datasheet:: DMT6016LPS-13 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: DMT6016LPS-13 more Information

Product Attribute
Attribute Value

Manufacturer: Diodes Incorporated

Product Category: FETs - Single

Series: DMT60

Packaging: Digi-ReelR Alternate Packaging

Unit-Weight: 0.003386 oz

Mounting-Style: SMD/SMT

Package-Case: 8-PowerTDFN

Technology: Si

Operating-Temperature: -55°C ~ 150°C (TJ)

Mounting-Type: Surface Mount

Number-of-Channels: 1 Channel

Supplier-Device-Package: PowerDI5060-8

Configuration: Single

FET-Type: MOSFET N-Channel, Metal Oxide

Power-Max: 1.23W

Transistor-Type: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 60V

Input-Capacitance-Ciss-Vds: 864pF @ 30V

FET-Feature: Standard

Current-Continuous-Drain-Id-25°C: 10.6A (Ta)

Rds-On-Max-Id-Vgs: 16 mOhm @ 10A, 10V

Vgs-th-Max-Id: 2.5V @ 250μA

Gate-Charge-Qg-Vgs: 17nC @ 10V

Pd-Power-Dissipation: 2.7 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 7 ns

Rise-Time: 5.2 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: 10.6 A

Vds-Drain-Source-Breakdown-Voltage: 60 V

Vgs-th-Gate-Source-Threshold-Voltage: 2.5 V

Rds-On-Drain-Source-Resistance: 16 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 13 ns

Typical-Turn-On-Delay-Time: 3.4 ns

Qg-Gate-Charge: 17 nC

Channel-Mode: Enhancement

Tags: DMT6016, DMT601, DMT60, DMT6, DMT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DMT6016LPS-13 Description

***Components: In a Pack of 20, N-Channel MOSFET, 32 A, 60 V, 8-Pin POWERDI5060 Diodes Inc DMT6016LPS-13

***ical: Trans MOSFET N-CH 60V 10.6A Automotive 8-Pin PowerDI EP T/R

***et: Trans MOSFET N-CH 60V 32A 8-Pin PowerDI 5060 T/R

***ure Electronics: MOSFET BVDSS: 41V~60V POWERDI5060-8 T&R 2.5K

***i-Key: MOSFET N-CH 60V 10.6A POWERDI

***ment14 APAC: MOSFET, N-CH, 32A, 60V, POWERDI5060; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:60V; On Resistance Rds(On):15Mohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:1.23W; No. Of Pins:8Pins Rohs Compliant: No

DMT6016LPS-13 More Information

DMTx MOSFETs: Diodes Incorporated DMTx MOSFETs are N-channel enhancement mode MOSFETs with low on-resistance and fast switching. These MOSFETs are also designed to meet the stringent requirements of automotive applications. Diodes Incorporated DMTx MOSFETs are ideal for high-efficiency power management applications.

DMT6016LPS Enhancement Mode MOSFET: Diodes Incorporated DMT6016LPS 60V N-Channel Enhancement Mode MOSFET minimizes the on-state resistance (RDS(ON)) while maintaining superior switching performance. DMT6016LPS offers low on-state resistance, high conversion efficiency, and low input capacitance. The thermally efficient POWERDI5060-8 package allows DMT6016LPS to support cooler running applications. With a <1.1mm package profile, DMT6016LPS is ideal for thin applications including load switches, adapter switches, and notebook PCs.Learn More

Gate Drivers: Diodes Incorporated Gate Drivers cover a multitude of applications in power systems and motor drives. These gate drivers act as the interface between microcontroller and IGBT or MOSFET power switches. Diodes Incorporated gate drivers provide optimum drive characteristics while controlling shoot-through.

Market price

Part #	Mfg.	Description	Stock	Price
DMT6016LPS-13 DISTI # DMT6016LPS-13DICT-ND	Diodes Incorporated	MOSFET N-CH 60V 10.6A POWERDI RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	11298In Stock	1000:$0.2774 500:$0.3589 100:$0.4895 10:$0.6530 1:$0.7700
DMT6016LPS-13 DISTI # DMT6016LPS-13DIDKR-ND	Diodes Incorporated	MOSFET N-CH 60V 10.6A POWERDI RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	11298In Stock	1000:$0.2774 500:$0.3589 100:$0.4895 10:$0.6530 1:$0.7700
DMT6016LPS-13 DISTI # DMT6016LPS-13DITR-ND	Diodes Incorporated	MOSFET N-CH 60V 10.6A POWERDI RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	10000In Stock	2500:$0.2455
DMT6016LPS-13 DISTI # DMT6016LPS-13	Diodes Incorporated	Trans MOSFET N-CH 60V 32A 8-Pin PowerDI 5060 T/R - Tape and Reel (Alt: DMT6016LPS-13) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 17500	2500:$0.2059 5000:$0.2059 10000:$0.2049 15000:$0.2049 25000:$0.2039
DMT6016LPS-13	Diodes Incorporated	N-Channel 60 V 16 mO Enhancement Mode Mosfet - PowerDI-5060-8 RoHS: Compliant	5000Reel	2500:$0.2850
DMT6016LPS-13 DISTI # 621-DMT6016LPS-13	Diodes Incorporated	MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A RoHS: Compliant	5980	1:$0.6300 10:$0.5200 100:$0.3170 1000:$0.2450 2500:$0.2090
DMT6016LPS-13 DISTI # 9211173P	Zetex / Diodes Inc	60V 10.6A N-CH MOSFET TRANS, RL	2480	200:£0.1620

Related products

Image	Part #	Description
	Mfr.#: DMT6016LSS-13 OMO.#: OMO-DMT6016LSS-13	MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A
	Mfr.#: DMT6013LFDF-7 OMO.#: OMO-DMT6013LFDF-7	MOSFET MOSFET BVDSS: 41V-60V
	Mfr.#: DMT6013LSS-13 OMO.#: OMO-DMT6013LSS-13	MOSFET MOSFET BVDSS 41V-60V
	Mfr.#: DMT6010LFG OMO.#: OMO-DMT6010LFG-1190	New and Original
	Mfr.#: DMT6015LFV-13 OMO.#: OMO-DMT6015LFV-13-DIODES	Trans MOSFET N-CH 60V 9.5A T/R
	Mfr.#: DMT6015LSS-13 OMO.#: OMO-DMT6015LSS-13-DIODES	Trans MOSFET N-CH 60V 9.2A 8-Pin SO T/R
	Mfr.#: DMT6016LSS OMO.#: OMO-DMT6016LSS-1190	New and Original
	Mfr.#: DMT6012LSS-13 OMO.#: OMO-DMT6012LSS-13-DIODES	MOSFET N-CH 60V8SOIC
	Mfr.#: DMT6016LSS-13 OMO.#: OMO-DMT6016LSS-13-DIODES	IGBT Transistors MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A
	Mfr.#: DMT6016LFDF-13 OMO.#: OMO-DMT6016LFDF-13-DIODES	MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A

Availability

Stock:: Available
On Order:: 4500
Enter Quantity:

Current price of DMT6016LPS-13 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.31~~; ~~$0.31~~

10: ~~$0.29~~; ~~$2.91~~

100: ~~$0.28~~; ~~$27.53~~

500: ~~$0.26~~; ~~$130.00~~

1000: ~~$0.24~~; ~~$244.70~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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DMT6016LPS-13

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes